High Mobility Flexible 2D Multilayer MoS2 TFTs on Solution-Based Polyimide Substrates

Seongin Hong; Muhammad Naqi; Uihyun Jung; Na Liu; Hyuk Jun Kwon; Costas P. Grigoropoulos; Young Ki Hong; Sunkook Kim

doi:10.1002/SDTP.11811

High Mobility Flexible 2D Multilayer MoS2 TFTs on Solution-Based Polyimide Substrates

Seongin Hong, Muhammad Naqi, Uihyun Jung, Na Liu, Hyuk Jun Kwon, Costas P. Grigoropoulos, Young Ki Hong, Sunkook Kim

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We report on Molybdenum disulfide (MoS2) based Transition metal dichalcogenides (TMDs) transistor as flexible/stretchable electronics with consistent carrier mobility, wide band-gap and mechanical expanse by using polyimide (PI) flexible substrate. Transistors fabricated in the following experiment have worthy properties: A field-effect-mobility measured as 108.6 cm²V^-1s^-1 and an (I_on/I_off) ratio obtained as 5×10⁵. Moreover, no deviations occurred under methodical cyclic bending tests with bending radius of curvature of 10 and 5mm. Overall in the malleable areas of flexible integrated circuitry fabrication, the stated electrical and mechanical consequences provide significant applications.

Original language	English
Pages (from-to)	965-967
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	48
Issue number	1
DOIs	https://doi.org/10.1002/SDTP.11811
State	Published - 2017
Event	SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States Duration: 21 May 2017 → 26 May 2017

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Publisher Copyright:
© 2017 SID.

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10.1002/SDTP.11811

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title = "High Mobility Flexible 2D Multilayer MoS2 TFTs on Solution-Based Polyimide Substrates",

abstract = "We report on Molybdenum disulfide (MoS2) based Transition metal dichalcogenides (TMDs) transistor as flexible/stretchable electronics with consistent carrier mobility, wide band-gap and mechanical expanse by using polyimide (PI) flexible substrate. Transistors fabricated in the following experiment have worthy properties: A field-effect-mobility measured as 108.6 cm2V-1s-1 and an (Ion/Ioff) ratio obtained as 5×105. Moreover, no deviations occurred under methodical cyclic bending tests with bending radius of curvature of 10 and 5mm. Overall in the malleable areas of flexible integrated circuitry fabrication, the stated electrical and mechanical consequences provide significant applications.",

author = "Seongin Hong and Muhammad Naqi and Uihyun Jung and Na Liu and Kwon, {Hyuk Jun} and Grigoropoulos, {Costas P.} and Hong, {Young Ki} and Sunkook Kim",

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T1 - High Mobility Flexible 2D Multilayer MoS2 TFTs on Solution-Based Polyimide Substrates

AU - Hong, Seongin

AU - Naqi, Muhammad

AU - Jung, Uihyun

AU - Liu, Na

AU - Kwon, Hyuk Jun

AU - Grigoropoulos, Costas P.

AU - Hong, Young Ki

AU - Kim, Sunkook

PY - 2017

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AB - We report on Molybdenum disulfide (MoS2) based Transition metal dichalcogenides (TMDs) transistor as flexible/stretchable electronics with consistent carrier mobility, wide band-gap and mechanical expanse by using polyimide (PI) flexible substrate. Transistors fabricated in the following experiment have worthy properties: A field-effect-mobility measured as 108.6 cm2V-1s-1 and an (Ion/Ioff) ratio obtained as 5×105. Moreover, no deviations occurred under methodical cyclic bending tests with bending radius of curvature of 10 and 5mm. Overall in the malleable areas of flexible integrated circuitry fabrication, the stated electrical and mechanical consequences provide significant applications.

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High Mobility Flexible 2D Multilayer MoS2 TFTs on Solution-Based Polyimide Substrates

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