High field-sensitivity planar Hall sensor based on NiFe/Cu/IrMn trilayer structure

A trilayer structure, which has weak exchange coupling and high active current, has been optimized emphasizing for high field-sensitivity planar Hall effect (PHE) sensor. To illustrate the high field sensitivity of the PHE sensor, three different structures are fabricated: a bilayer thin film Ta(3)/NiFe(10)/IrMn(10)/Ta(3) (nm), a spin-valve thin film Ta(3)/NiFe(10)/Cu(1.2)/NiFe(2)/IrMn(10)/Ta(3) (nm), and a trilayer thin film Ta(3)/NiFe(10)/Cu(0.12)/IrMn(10)/Ta(3) (nm). The characterized results reveal that the field sensitivity of PHE sensor based on trilayer thin film is about one order larger than that of bilayer and is about twice larger than that of spin-valve thin film. Moreover, in trilayer structure, the thinner spacer layer gives the better performance. When the nominal thickness of spacer Cu layer is the smallest, the PHE sensor exhibits the best performance, i.e., in this experiment, it is about 0.12 nm.