High-current-density CuOx/InZnOx thin-film diodes for cross-point memory applications

Bo Soo Kang; Seung Eon Ahn; Myoung Jae Lee; Genrikh Stefanovich; Ki Hwan Kim; Wen Xu Xianyu; Chang Bum Lee; Youngsoo Park; In Gyu Back; Bae Ho Park

doi:10.1002/adma.200702932

High-current-density CuO_x/InZnO_x thin-film diodes for cross-point memory applications

Bo Soo Kang, Seung Eon Ahn, Myoung Jae Lee, Genrikh Stefanovich, Ki Hwan Kim, Wen Xu Xianyu, Chang Bum Lee, Youngsoo Park, In Gyu Back, Bae Ho Park

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

116 Scopus citations

Abstract

A study was conducted to demonstrate the physical properties of amorphous thin-film p-CuO/n-InZnO_x heterojunction diodes that can be used as a switch element in high-density cross-point resistive memory. The study demonstrated that the film is applicable to a stackable structure or polymer memory,as it is deposited at room temperature. It was demonstrated that the diode shows significant rectification properties, such as a forward current density of 3.5 × 10⁴ A cm^-2 and a rectifying ratio of 10⁶ at ∓2.45 V. The composition of each layer of of the CuO and IZO films grown on SiO₂/Si substrates,was confirmed by Rutherford backscattering spectroscopy (RBS).

Original language	English
Pages (from-to)	3066-3069
Number of pages	4
Journal	Advanced Materials
Volume	20
Issue number	16
DOIs	https://doi.org/10.1002/adma.200702932
State	Published - 18 Aug 2008

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title = "High-current-density CuOx/InZnOx thin-film diodes for cross-point memory applications",

abstract = "A study was conducted to demonstrate the physical properties of amorphous thin-film p-CuO/n-InZnOx heterojunction diodes that can be used as a switch element in high-density cross-point resistive memory. The study demonstrated that the film is applicable to a stackable structure or polymer memory,as it is deposited at room temperature. It was demonstrated that the diode shows significant rectification properties, such as a forward current density of 3.5 × 104 A cm-2 and a rectifying ratio of 106 at ∓2.45 V. The composition of each layer of of the CuO and IZO films grown on SiO2/Si substrates,was confirmed by Rutherford backscattering spectroscopy (RBS).",

author = "Kang, \{Bo Soo\} and Ahn, \{Seung Eon\} and Lee, \{Myoung Jae\} and Genrikh Stefanovich and Kim, \{Ki Hwan\} and Xianyu, \{Wen Xu\} and Lee, \{Chang Bum\} and Youngsoo Park and Back, \{In Gyu\} and Park, \{Bae Ho\}",

year = "2008",

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doi = "10.1002/adma.200702932",

language = "English",

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T1 - High-current-density CuOx/InZnOx thin-film diodes for cross-point memory applications

AU - Kang, Bo Soo

AU - Ahn, Seung Eon

AU - Lee, Myoung Jae

AU - Stefanovich, Genrikh

AU - Kim, Ki Hwan

AU - Xianyu, Wen Xu

AU - Lee, Chang Bum

AU - Park, Youngsoo

AU - Back, In Gyu

AU - Park, Bae Ho

PY - 2008/8/18

Y1 - 2008/8/18

N2 - A study was conducted to demonstrate the physical properties of amorphous thin-film p-CuO/n-InZnOx heterojunction diodes that can be used as a switch element in high-density cross-point resistive memory. The study demonstrated that the film is applicable to a stackable structure or polymer memory,as it is deposited at room temperature. It was demonstrated that the diode shows significant rectification properties, such as a forward current density of 3.5 × 104 A cm-2 and a rectifying ratio of 106 at ∓2.45 V. The composition of each layer of of the CuO and IZO films grown on SiO2/Si substrates,was confirmed by Rutherford backscattering spectroscopy (RBS).

AB - A study was conducted to demonstrate the physical properties of amorphous thin-film p-CuO/n-InZnOx heterojunction diodes that can be used as a switch element in high-density cross-point resistive memory. The study demonstrated that the film is applicable to a stackable structure or polymer memory,as it is deposited at room temperature. It was demonstrated that the diode shows significant rectification properties, such as a forward current density of 3.5 × 104 A cm-2 and a rectifying ratio of 106 at ∓2.45 V. The composition of each layer of of the CuO and IZO films grown on SiO2/Si substrates,was confirmed by Rutherford backscattering spectroscopy (RBS).

UR - https://www.scopus.com/pages/publications/54949154898

U2 - 10.1002/adma.200702932

DO - 10.1002/adma.200702932

M3 - Article

AN - SCOPUS:54949154898

SN - 0935-9648

VL - 20

SP - 3066

EP - 3069

JO - Advanced Materials

JF - Advanced Materials

IS - 16

ER -

High-current-density CuO_x/InZnO_x thin-film diodes for cross-point memory applications

Abstract

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