Growth of niobium on the three-dimensional topological insulator Bi 2 Te 1.95 Se 1.05

Philipp Meixner, Seong Joon Lim, Joonbum Park, Jun Sung Kim, Saskia F. Fischer, Jungpil Seo, Young Kuk

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

While applying a new cleaving method, we investigated the growth of Nb on the three-dimensional (3D) topological insulator (TI) Bi 2 Te 1.95 Se 1.05 by scanning tunneling microscopy and spectroscopy. After the deposition of nearly a full monolayer of Nb by high-energy electron-beam evaporation, we observed a downshift of the bands and the Dirac point on the TI surface, which is the result of an n-type doping of the TI by transition metal adatoms. Extra peaks in the spectroscopy results upon Nb deposition might indicate a Rashba-split of the bulk bands. Nb grew in small 10 nm wide islands upon sub-monolayer growth and in a layer-by-layer growth mode up to an annealing temperature of 450 °C.

Original languageEnglish
Pages (from-to)185-189
Number of pages5
JournalApplied Surface Science
Volume361
DOIs
StatePublished - 15 Jan 2016

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

  • Bi Te Se
  • Niobium
  • Scanning tunneling microscopy
  • Topological insulators

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