Abstract
While applying a new cleaving method, we investigated the growth of Nb on the three-dimensional (3D) topological insulator (TI) Bi 2 Te 1.95 Se 1.05 by scanning tunneling microscopy and spectroscopy. After the deposition of nearly a full monolayer of Nb by high-energy electron-beam evaporation, we observed a downshift of the bands and the Dirac point on the TI surface, which is the result of an n-type doping of the TI by transition metal adatoms. Extra peaks in the spectroscopy results upon Nb deposition might indicate a Rashba-split of the bulk bands. Nb grew in small 10 nm wide islands upon sub-monolayer growth and in a layer-by-layer growth mode up to an annealing temperature of 450 °C.
Original language | English |
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Pages (from-to) | 185-189 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 361 |
DOIs | |
State | Published - 15 Jan 2016 |
Bibliographical note
Publisher Copyright:© 2015 Elsevier B.V. All rights reserved.
Keywords
- Bi Te Se
- Niobium
- Scanning tunneling microscopy
- Topological insulators