Geometrically Enhanced Graphene Tunneling Diode with Lateral Nano-Scale Gap

Jae Hoon Yang; Jeong Hee Shin; Seunguk Kim; Goeun Pyo; A. Rang Jang; Hyoung Woo Yang; Dae Joon Kang; Jae Eun Jang

doi:10.1109/LED.2019.2940818

Geometrically Enhanced Graphene Tunneling Diode with Lateral Nano-Scale Gap

Jae Hoon Yang, Jeong Hee Shin, Seunguk Kim, Goeun Pyo, A. Rang Jang, Hyoung Woo Yang, Dae Joon Kang, Jae Eun Jang

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The implications of graphene for tunneling diodes have attracted great attention due to the excellent electrical properties of graphene. Most graphene-based tunneling diodes have been fabricated with a vertical structure. They are limited by a complicated fabrication process. Herein, we present a lateral-structured graphene tunneling diode with asymmetric geometry. The asymmetric geometry induces strong electric field enhancement leading electronic band bending. Therefore, the asymmetry of the graphene tunneling is improved as much as 2.5 times. The lateral device structure opens up possibilities to apply graphene tunneling diodes in future electronic circuits.

Original language	English
Article number	8835092
Pages (from-to)	1840-1843
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	11
DOIs	https://doi.org/10.1109/LED.2019.2940818
State	Published - Nov 2019

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Lateral structure
asymmetric geometry
electric field confinement
graphene tunneling diode

Access to Document

10.1109/LED.2019.2940818

Cite this

@article{6d5f3f0534da442e9f01845661df79b5,

title = "Geometrically Enhanced Graphene Tunneling Diode with Lateral Nano-Scale Gap",

abstract = "The implications of graphene for tunneling diodes have attracted great attention due to the excellent electrical properties of graphene. Most graphene-based tunneling diodes have been fabricated with a vertical structure. They are limited by a complicated fabrication process. Herein, we present a lateral-structured graphene tunneling diode with asymmetric geometry. The asymmetric geometry induces strong electric field enhancement leading electronic band bending. Therefore, the asymmetry of the graphene tunneling is improved as much as 2.5 times. The lateral device structure opens up possibilities to apply graphene tunneling diodes in future electronic circuits.",

keywords = "Lateral structure, asymmetric geometry, electric field confinement, graphene tunneling diode",

author = "Yang, {Jae Hoon} and Shin, {Jeong Hee} and Seunguk Kim and Goeun Pyo and Jang, {A. Rang} and Yang, {Hyoung Woo} and Kang, {Dae Joon} and Jang, {Jae Eun}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2019",

month = nov,

doi = "10.1109/LED.2019.2940818",

language = "English",

volume = "40",

pages = "1840--1843",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Geometrically Enhanced Graphene Tunneling Diode with Lateral Nano-Scale Gap

AU - Yang, Jae Hoon

AU - Shin, Jeong Hee

AU - Kim, Seunguk

AU - Pyo, Goeun

AU - Jang, A. Rang

AU - Yang, Hyoung Woo

AU - Kang, Dae Joon

AU - Jang, Jae Eun

PY - 2019/11

Y1 - 2019/11

N2 - The implications of graphene for tunneling diodes have attracted great attention due to the excellent electrical properties of graphene. Most graphene-based tunneling diodes have been fabricated with a vertical structure. They are limited by a complicated fabrication process. Herein, we present a lateral-structured graphene tunneling diode with asymmetric geometry. The asymmetric geometry induces strong electric field enhancement leading electronic band bending. Therefore, the asymmetry of the graphene tunneling is improved as much as 2.5 times. The lateral device structure opens up possibilities to apply graphene tunneling diodes in future electronic circuits.

AB - The implications of graphene for tunneling diodes have attracted great attention due to the excellent electrical properties of graphene. Most graphene-based tunneling diodes have been fabricated with a vertical structure. They are limited by a complicated fabrication process. Herein, we present a lateral-structured graphene tunneling diode with asymmetric geometry. The asymmetric geometry induces strong electric field enhancement leading electronic band bending. Therefore, the asymmetry of the graphene tunneling is improved as much as 2.5 times. The lateral device structure opens up possibilities to apply graphene tunneling diodes in future electronic circuits.

KW - Lateral structure

KW - asymmetric geometry

KW - electric field confinement

KW - graphene tunneling diode

UR - http://www.scopus.com/inward/record.url?scp=85074485373&partnerID=8YFLogxK

U2 - 10.1109/LED.2019.2940818

DO - 10.1109/LED.2019.2940818

M3 - Article

AN - SCOPUS:85074485373

SN - 0741-3106

VL - 40

SP - 1840

EP - 1843

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 8835092

ER -

Geometrically Enhanced Graphene Tunneling Diode with Lateral Nano-Scale Gap

Abstract

Bibliographical note

Keywords

Access to Document

Other files and links

Fingerprint

Cite this