Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate

Jong Won Lee; Seong Wan Ryu; Dong Ok Shin; Bong Hoon Kim; Sang Ouk Kim; Yang Kyu Choi

doi:10.1016/j.sse.2009.03.007

Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate

Jong Won Lee
, Seong Wan Ryu
, Dong Ok Shin
, Bong Hoon Kim
, Sang Ouk Kim
, Yang Kyu Choi

Department of Robotics and Mechatronics Engineering

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

This study describes geometric characteristics of a nonvolatile memory (NVM) device with a designed chromium (Cr) nanocrystal (NC) floating gate. By using a block copolymer (BCP) nanotemplate as a mask layer, cone-shaped NCs and disc-shaped NCs were formed. It was found that the NVM device using the cone-shaped NC had a better program efficiency than that of the device using the disc-shaped one. This trend was verified by a theoretical model, which considered an effect of the capacitive-coupling ratio between a control gate and a NC floating gate.

Original language	English
Pages (from-to)	640-643
Number of pages	4
Journal	Solid-State Electronics
Volume	53
Issue number	6
DOIs	https://doi.org/10.1016/j.sse.2009.03.007
State	Published - Jun 2009

Bibliographical note

Funding Information:
This work was supported by the National Research Program for 0.1-Terabit Nonvolatile Memory Development, sponsored by the Ministry of Knowledge Economy, and was also supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R0A-2008-000-20057-0).

Keywords

Block copolymer (BCP) nanotemplate
Capacitive-coupling ratio
Geometric effect
Modeling
Nanocrystal (NC)
Nonvolatile memories (NVM)

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10.1016/j.sse.2009.03.007

Cite this

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title = "Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate",

abstract = "This study describes geometric characteristics of a nonvolatile memory (NVM) device with a designed chromium (Cr) nanocrystal (NC) floating gate. By using a block copolymer (BCP) nanotemplate as a mask layer, cone-shaped NCs and disc-shaped NCs were formed. It was found that the NVM device using the cone-shaped NC had a better program efficiency than that of the device using the disc-shaped one. This trend was verified by a theoretical model, which considered an effect of the capacitive-coupling ratio between a control gate and a NC floating gate.",

keywords = "Block copolymer (BCP) nanotemplate, Capacitive-coupling ratio, Geometric effect, Modeling, Nanocrystal (NC), Nonvolatile memories (NVM)",

author = "Lee, \{Jong Won\} and Ryu, \{Seong Wan\} and Shin, \{Dong Ok\} and Kim, \{Bong Hoon\} and Kim, \{Sang Ouk\} and Choi, \{Yang Kyu\}",

note = "Funding Information: This work was supported by the National Research Program for 0.1-Terabit Nonvolatile Memory Development, sponsored by the Ministry of Knowledge Economy, and was also supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R0A-2008-000-20057-0).",

year = "2009",

month = jun,

doi = "10.1016/j.sse.2009.03.007",

language = "English",

volume = "53",

pages = "640--643",

journal = "Solid-State Electronics",

issn = "0038-1101",

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AU - Lee, Jong Won

AU - Ryu, Seong Wan

AU - Shin, Dong Ok

AU - Kim, Bong Hoon

AU - Kim, Sang Ouk

AU - Choi, Yang Kyu

N1 - Funding Information: This work was supported by the National Research Program for 0.1-Terabit Nonvolatile Memory Development, sponsored by the Ministry of Knowledge Economy, and was also supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MEST) (No. R0A-2008-000-20057-0).

PY - 2009/6

Y1 - 2009/6

N2 - This study describes geometric characteristics of a nonvolatile memory (NVM) device with a designed chromium (Cr) nanocrystal (NC) floating gate. By using a block copolymer (BCP) nanotemplate as a mask layer, cone-shaped NCs and disc-shaped NCs were formed. It was found that the NVM device using the cone-shaped NC had a better program efficiency than that of the device using the disc-shaped one. This trend was verified by a theoretical model, which considered an effect of the capacitive-coupling ratio between a control gate and a NC floating gate.

AB - This study describes geometric characteristics of a nonvolatile memory (NVM) device with a designed chromium (Cr) nanocrystal (NC) floating gate. By using a block copolymer (BCP) nanotemplate as a mask layer, cone-shaped NCs and disc-shaped NCs were formed. It was found that the NVM device using the cone-shaped NC had a better program efficiency than that of the device using the disc-shaped one. This trend was verified by a theoretical model, which considered an effect of the capacitive-coupling ratio between a control gate and a NC floating gate.

KW - Block copolymer (BCP) nanotemplate

KW - Capacitive-coupling ratio

KW - Geometric effect

KW - Modeling

KW - Nanocrystal (NC)

KW - Nonvolatile memories (NVM)

UR - https://www.scopus.com/pages/publications/67349097152

U2 - 10.1016/j.sse.2009.03.007

DO - 10.1016/j.sse.2009.03.007

M3 - Article

AN - SCOPUS:67349097152

SN - 0038-1101

VL - 53

SP - 640

EP - 643

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 6

ER -

Geometric effects of nanocrystals in nonvolatile memory using block copolymer nanotemplate

Abstract

Bibliographical note

Keywords

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