Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O

H. J. Lee; E. Helgren; F. Hellman

doi:10.1063/1.3147856

Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O

H. J. Lee, E. Helgren, F. Hellman

Division of Nanotechnology

University of California at Berkeley

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. The ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.

Original language	English
Article number	212106
Journal	Applied Physics Letters
Volume	94
Issue number	21
DOIs	https://doi.org/10.1063/1.3147856
State	Published - 2009

Bibliographical note

Funding Information:
We would like to thank Danial Queen and Micol Alemani for discussions and help. Materials synthesis and characterization were supported by DOE Division of Materials Sciences and Engineering under Contract No. DE-AC02-05CH11231 and device fabrication and analysis were supported by Western Institute of Nanoelectronics.

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title = "Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O",

abstract = "Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. The ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.",

author = "Lee, {H. J.} and E. Helgren and F. Hellman",

note = "Funding Information: We would like to thank Danial Queen and Micol Alemani for discussions and help. Materials synthesis and characterization were supported by DOE Division of Materials Sciences and Engineering under Contract No. DE-AC02-05CH11231 and device fabrication and analysis were supported by Western Institute of Nanoelectronics.",

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T1 - Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O

AU - Lee, H. J.

AU - Helgren, E.

AU - Hellman, F.

N1 - Funding Information: We would like to thank Danial Queen and Micol Alemani for discussions and help. Materials synthesis and characterization were supported by DOE Division of Materials Sciences and Engineering under Contract No. DE-AC02-05CH11231 and device fabrication and analysis were supported by Western Institute of Nanoelectronics.

PY - 2009

Y1 - 2009

N2 - Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. The ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.

AB - Electric field-controlled ferromagnetism of (Zn,Co)O is demonstrated via anomalous Hall effect measurements. The electron carrier concentration in this material is 1.65× 1020 cm-3 as measured via ordinary Hall effect at 4 K, and an anomalous Hall effect is observed up to 6 K, but with no hysteresis at any temperature. With positive electric gate field, the carrier concentration is increased by approximately 2%, resulting in a clear magnetic hysteresis at 4 K. The ability to reversibly induce/eliminate ferromagnetism by applied gate field alone, measured via the effect on the carriers, is a clear sign of carrier-induced ferromagnetism in this system.

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Gate-controlled magnetic properties of the magnetic semiconductor (Zn,Co)O

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