Fractal dimension of conducting paths in nickel oxide (NiO) thin films during resistance switching

In Kyeong Yoo; Bo Soo Kang; Seung Eon Ahn; Chang Bum Lee; Myoung Jae Lee; Gyeong Su Park; Xiang Shu Li

doi:10.1109/TNANO.2010.2041670

Fractal dimension of conducting paths in nickel oxide (NiO) thin films during resistance switching

In Kyeong Yoo, Bo Soo Kang, Seung Eon Ahn, Chang Bum Lee, Myoung Jae Lee, Gyeong Su Park, Xiang Shu Li

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is explained by fractal dimension.

Original language	English
Article number	5409546
Pages (from-to)	131-133
Number of pages	3
Journal	IEEE Transactions on Nanotechnology
Volume	9
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2010.2041670
State	Published - Mar 2010

Bibliographical note

Funding Information:
Manuscript received September 14, 2009; revised November 30, 2009. First published February 8, 2010; current version published March 10, 2010. The work of B. S. Kang was supported by the research fund of Hanyang University (HY-2009-N). The review of this letter was arranged by Associate Editor J.-P. Leburton.

Keywords

Nickel oxide
Resistance switching
Soft breakdown
Switching power

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10.1109/TNANO.2010.2041670

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title = "Fractal dimension of conducting paths in nickel oxide (NiO) thin films during resistance switching",

abstract = "A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is explained by fractal dimension.",

keywords = "Nickel oxide, Resistance switching, Soft breakdown, Switching power",

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note = "Funding Information: Manuscript received September 14, 2009; revised November 30, 2009. First published February 8, 2010; current version published March 10, 2010. The work of B. S. Kang was supported by the research fund of Hanyang University (HY-2009-N). The review of this letter was arranged by Associate Editor J.-P. Leburton.",

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AU - Ahn, Seung Eon

AU - Lee, Chang Bum

AU - Lee, Myoung Jae

AU - Park, Gyeong Su

AU - Li, Xiang Shu

N1 - Funding Information: Manuscript received September 14, 2009; revised November 30, 2009. First published February 8, 2010; current version published March 10, 2010. The work of B. S. Kang was supported by the research fund of Hanyang University (HY-2009-N). The review of this letter was arranged by Associate Editor J.-P. Leburton.

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N2 - A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is explained by fractal dimension.

AB - A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is explained by fractal dimension.

KW - Nickel oxide

KW - Resistance switching

KW - Soft breakdown

KW - Switching power

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ER -

Fractal dimension of conducting paths in nickel oxide (NiO) thin films during resistance switching

Abstract

Bibliographical note

Keywords

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