Forming time of conducting channels in double-layer Pt/Ta2O 5/TaOx/Pt and single-layer Pt/TaOx/Pt resistance memories

H. K. Yoo; B. S. Kang; S. B. Lee

doi:10.1016/j.tsf.2013.06.032

Forming time of conducting channels in double-layer Pt/Ta₂O ₅/TaO_x/Pt and single-layer Pt/TaO_x/Pt resistance memories

H. K. Yoo
, B. S. Kang
, S. B. Lee

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Oxide double-layer systems have recently attracted much attention, owing to their excellent performance as nonvolatile bipolar resistance memory. In this study, we measured the time required to form conducting channels (i.e., the forming time) in double-layer Pt/Ta₂O₅/TaO_x/Pt cells and single-layer Pt/TaO_x/Pt cells by applying a pulse-waveform voltage signal. The voltage amplitude dependence of forming times in both samples revealed nonlinearities with nine orders ofmagnitude. Byinvestigating their temperature dependence, wefound that channel formation for both samples can be attributed to thermally assisted dielectric breakdown.

Original language	English
Pages (from-to)	190-193
Number of pages	4
Journal	Thin Solid Films
Volume	540
DOIs	https://doi.org/10.1016/j.tsf.2013.06.032
State	Published - 1 Jul 2013

Bibliographical note

Funding Information:
This work was supported by the Research Center Program of Institute for Basic Science [Grant No. EM1203 ] and the National Research Foundation [(B.S.K.) Grant No. 2012-0001684 ] in Korea.

Keywords

Dielectric breakdown
Resistance random-access memory (RRAM)
Resistance switching

Access to Document

10.1016/j.tsf.2013.06.032

Cite this

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title = "Forming time of conducting channels in double-layer Pt/Ta2O 5/TaOx/Pt and single-layer Pt/TaOx/Pt resistance memories",

abstract = "Oxide double-layer systems have recently attracted much attention, owing to their excellent performance as nonvolatile bipolar resistance memory. In this study, we measured the time required to form conducting channels (i.e., the forming time) in double-layer Pt/Ta2O5/TaOx/Pt cells and single-layer Pt/TaOx/Pt cells by applying a pulse-waveform voltage signal. The voltage amplitude dependence of forming times in both samples revealed nonlinearities with nine orders ofmagnitude. Byinvestigating their temperature dependence, wefound that channel formation for both samples can be attributed to thermally assisted dielectric breakdown.",

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note = "Funding Information: This work was supported by the Research Center Program of Institute for Basic Science [Grant No. EM1203 ] and the National Research Foundation [(B.S.K.) Grant No. 2012-0001684 ] in Korea.",

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doi = "10.1016/j.tsf.2013.06.032",

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AU - Kang, B. S.

AU - Lee, S. B.

N1 - Funding Information: This work was supported by the Research Center Program of Institute for Basic Science [Grant No. EM1203 ] and the National Research Foundation [(B.S.K.) Grant No. 2012-0001684 ] in Korea.

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Y1 - 2013/7/1

N2 - Oxide double-layer systems have recently attracted much attention, owing to their excellent performance as nonvolatile bipolar resistance memory. In this study, we measured the time required to form conducting channels (i.e., the forming time) in double-layer Pt/Ta2O5/TaOx/Pt cells and single-layer Pt/TaOx/Pt cells by applying a pulse-waveform voltage signal. The voltage amplitude dependence of forming times in both samples revealed nonlinearities with nine orders ofmagnitude. Byinvestigating their temperature dependence, wefound that channel formation for both samples can be attributed to thermally assisted dielectric breakdown.

AB - Oxide double-layer systems have recently attracted much attention, owing to their excellent performance as nonvolatile bipolar resistance memory. In this study, we measured the time required to form conducting channels (i.e., the forming time) in double-layer Pt/Ta2O5/TaOx/Pt cells and single-layer Pt/TaOx/Pt cells by applying a pulse-waveform voltage signal. The voltage amplitude dependence of forming times in both samples revealed nonlinearities with nine orders ofmagnitude. Byinvestigating their temperature dependence, wefound that channel formation for both samples can be attributed to thermally assisted dielectric breakdown.

KW - Dielectric breakdown

KW - Resistance random-access memory (RRAM)

KW - Resistance switching

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