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Forming process of unipolar resistance switching in Ta
2
O
5-x
thin films
Shin Buhm Lee
, Hyang Keun Yoo
, Bo Soo Kang
Department of Physics and Chemistry
Seoul National University
Hanyang University
Research output
:
Contribution to journal
›
Article
›
peer-review
1
Scopus citations
Overview
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2
O
5-x
thin films'. Together they form a unique fingerprint.
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Chemistry
Resistance
100%
Procedure
100%
Liquid Film
100%
Pressure
33%
Thickness
33%
Dioxygen
33%
Voltage
16%
Rate
16%
Electric Field
16%
Dielectric Material
16%
Physics
Thin Films
100%
Switching
100%
Electrical Breakdown
33%
Oxygen
33%
Film Thickness
33%
Waveform
16%
Pressure
16%
Electric Potential
16%
Electric Fields
16%
Pressure Dependence
16%
Rangefinding
16%
Earth and Planetary Sciences
Thin Films
100%
Oxygen
33%
Film Thickness
33%
Electric Potential
16%
Dependence
16%
Rate
16%
Rangefinding
16%
Surface Pressure
16%
Waveform
16%
Material Science
Thin Films
100%
Forming Process
100%
Film Thickness
33%
Film
16%
Earth and Planetary Sciences
Switching
100%
Neuroscience
Dependent Personality Disorder
33%