Forming process of unipolar resistance switching in Ta2O 5-x thin films

Shin Buhm Lee; Hyang Keun Yoo; Bo Soo Kang

doi:10.1016/j.cap.2013.02.011

Forming process of unipolar resistance switching in Ta₂O _5-x thin films

Shin Buhm Lee
, Hyang Keun Yoo
, Bo Soo Kang

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, E_F, required to initiate unipolar resistance switching (URS) in Ta₂O_5-x thin films. We measured the dependence of E_F by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v = 20 mV s^-1 to 5 MV s ^-1). Our results showed that the URS-E_F was not influenced by the Ta₂O_5-x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta ₂O_5-x thin films should be governed by thermally assisted dielectric breakdown in our measurement range.

Original language	English
Pages (from-to)	1172-1174
Number of pages	3
Journal	Current Applied Physics
Volume	13
Issue number	7
DOIs	https://doi.org/10.1016/j.cap.2013.02.011
State	Published - 2013

Keywords

Dielectric breakdown
Resistance random-access memory (RRAM)
Resistance switching

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10.1016/j.cap.2013.02.011

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title = "Forming process of unipolar resistance switching in Ta2O 5-x thin films",

abstract = "We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, EF, required to initiate unipolar resistance switching (URS) in Ta2O5-x thin films. We measured the dependence of EF by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v = 20 mV s-1 to 5 MV s -1). Our results showed that the URS-EF was not influenced by the Ta2O5-x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta 2O5-x thin films should be governed by thermally assisted dielectric breakdown in our measurement range.",

keywords = "Dielectric breakdown, Resistance random-access memory (RRAM), Resistance switching",

author = "Lee, \{Shin Buhm\} and Yoo, \{Hyang Keun\} and Kang, \{Bo Soo\}",

year = "2013",

doi = "10.1016/j.cap.2013.02.011",

language = "English",

volume = "13",

pages = "1172--1174",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

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}

TY - JOUR

T1 - Forming process of unipolar resistance switching in Ta2O 5-x thin films

AU - Lee, Shin Buhm

AU - Yoo, Hyang Keun

AU - Kang, Bo Soo

PY - 2013

Y1 - 2013

N2 - We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, EF, required to initiate unipolar resistance switching (URS) in Ta2O5-x thin films. We measured the dependence of EF by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v = 20 mV s-1 to 5 MV s -1). Our results showed that the URS-EF was not influenced by the Ta2O5-x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta 2O5-x thin films should be governed by thermally assisted dielectric breakdown in our measurement range.

AB - We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, EF, required to initiate unipolar resistance switching (URS) in Ta2O5-x thin films. We measured the dependence of EF by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v = 20 mV s-1 to 5 MV s -1). Our results showed that the URS-EF was not influenced by the Ta2O5-x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta 2O5-x thin films should be governed by thermally assisted dielectric breakdown in our measurement range.

KW - Dielectric breakdown

KW - Resistance random-access memory (RRAM)

KW - Resistance switching

UR - https://www.scopus.com/pages/publications/84885586399

U2 - 10.1016/j.cap.2013.02.011

DO - 10.1016/j.cap.2013.02.011

M3 - Article

AN - SCOPUS:84885586399

SN - 1567-1739

VL - 13

SP - 1172

EP - 1174

JO - Current Applied Physics

JF - Current Applied Physics

IS - 7

ER -

Forming process of unipolar resistance switching in Ta₂O _5-x thin films

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Keywords

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