TY - JOUR
T1 - Forming process of unipolar resistance switching in Ta2O 5-x thin films
AU - Lee, Shin Buhm
AU - Yoo, Hyang Keun
AU - Kang, Bo Soo
PY - 2013
Y1 - 2013
N2 - We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, EF, required to initiate unipolar resistance switching (URS) in Ta2O5-x thin films. We measured the dependence of EF by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v = 20 mV s-1 to 5 MV s -1). Our results showed that the URS-EF was not influenced by the Ta2O5-x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta 2O5-x thin films should be governed by thermally assisted dielectric breakdown in our measurement range.
AB - We investigated the film-thickness and ambient oxygen-pressure dependence of the electric field, EF, required to initiate unipolar resistance switching (URS) in Ta2O5-x thin films. We measured the dependence of EF by applying a triangular-waveform voltage signal to the film over a wide sweep-rate range (v = 20 mV s-1 to 5 MV s -1). Our results showed that the URS-EF was not influenced by the Ta2O5-x film thickness nor ambient oxygen-pressure. This suggested that the URS-forming process in Ta 2O5-x thin films should be governed by thermally assisted dielectric breakdown in our measurement range.
KW - Dielectric breakdown
KW - Resistance random-access memory (RRAM)
KW - Resistance switching
UR - http://www.scopus.com/inward/record.url?scp=84885586399&partnerID=8YFLogxK
U2 - 10.1016/j.cap.2013.02.011
DO - 10.1016/j.cap.2013.02.011
M3 - Article
AN - SCOPUS:84885586399
SN - 1567-1739
VL - 13
SP - 1172
EP - 1174
JO - Current Applied Physics
JF - Current Applied Physics
IS - 7
ER -