Formation of a Vertical MOSFET for Charge Sensing in a Si Micro-Fluidic Channel

We have formed a fluidic channel that can be used in micro-fluidic systems and fabricated a 3-dimensional vertical metal-oxide semiconductor field-effect transistor (vertical MOSFET) in the convex corner of a Si micro-fluidic channel by using an anisotropic tetramethyl ammonium hydroxide (TMAH) etching solution. A Au/Cr layer was used for the gate metal and might be useful for detecting charged biomolecules. The electrical characteristics of the vertical MOSFET and its operation as a chemical sensor were investigated. At V _DS = -5 V and V _GS = -5 V the drain current of the device was -22.5 μA and the threshold voltage was about -1.4 V. A non-planar, non-rectangular vertical MOSFET with a trapezoidal gate was transformed into an equivalent rectangularly based one by using a Schwartz-Christoffel transformation. The LEVEL1 device parameters of the vertical MOSFET were extracted from the measured electrical device characteristics and were used in the SPICE simulation for the vertical MOSFET. The measured and the simulated results for the vertical PMOSFET showed relatively good agreement. When the vertical MOSFET was dipped into a thiol DNA solution, the drain current decreased due to charged biomolecules probably being adsorbed on the gate, which indicates that a vertical MOSFET in a Si micro-fiuidic channel might be useful for sensing charged biomolecules.