Abstract
We report on a Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the phosphorus-doped p-type ZnO with a hole concentration of 1.0 × 1018 cm-3. As-deposited Ni/Au contacts to p-type ZnO showed a specific contact resistance of 7.67 × 10-3 O cm2 by forming Ni-Zn phase to increase the hole concentration near the ZnO surface. The specific contact resistance was decreased with increasing the thermal annealing temperature. When the Ni/Au contact was annealed at 600°C for 30 s in an air ambient, the specific contact resistance was greatly decreased to 1.72 ×10-4 ω cm2. The improved ohmic property was attributed to an increase in the hole concentration by the formation of Ni-Zn and Au-Zn phases due to the outdiffusion of Zn during the thermal annealing process.
Original language | English |
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Pages (from-to) | G179-G181 |
Journal | Journal of the Electrochemical Society |
Volume | 152 |
Issue number | 3 |
DOIs | |
State | Published - 2005 |