Formation and effect of thermal annealing for low-resistance Ni/Au ohmic contact to phosphorous-doped p-type ZnO

Jae Hong Lim, Kyoung Kook Kim, Dae Kue Hwang, Hyun Sik Kim, Jin Yong Oh, Seong Ju Park

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Abstract

We report on a Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the phosphorus-doped p-type ZnO with a hole concentration of 1.0 × 1018 cm-3. As-deposited Ni/Au contacts to p-type ZnO showed a specific contact resistance of 7.67 × 10-3 O cm2 by forming Ni-Zn phase to increase the hole concentration near the ZnO surface. The specific contact resistance was decreased with increasing the thermal annealing temperature. When the Ni/Au contact was annealed at 600°C for 30 s in an air ambient, the specific contact resistance was greatly decreased to 1.72 ×10-4 ω cm2. The improved ohmic property was attributed to an increase in the hole concentration by the formation of Ni-Zn and Au-Zn phases due to the outdiffusion of Zn during the thermal annealing process.

Original languageEnglish
Pages (from-to)G179-G181
JournalJournal of the Electrochemical Society
Volume152
Issue number3
DOIs
StatePublished - 2005

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