Ferroelectrics based on hfo2 film

Chongmyeong Song, Hyuk Jun Kwon

Research output: Contribution to journalReview articlepeer-review

17 Scopus citations

Abstract

The discovery of ferroelectricity in HfO2 thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO2 has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have rapidly progressed in the past decade. Ferroelectricity can be induced in HfO2 by various deposition methods and heat treatment processes. By combining ferroelectric materials with field-effect transistors, devices that combine logic and memory functions can be implemented. Ferroelectric HfO2-based devices show high potential, but there are some challenges to overcome in endurance and characterization. In this paper, we discuss the fabrication and characteristics of ferroelectric HfO2 film and various applications, including negative capacitance (NC)), Ferroelectric random-access memory (FeRAM), Ferroelectric tunnel junction (FTJ), and Ferroelectric Field-effect Transistor (FeFET).

Original languageEnglish
Article number2759
JournalElectronics (Switzerland)
Volume10
Issue number22
DOIs
StatePublished - 1 Nov 2021

Bibliographical note

Publisher Copyright:
© 2021 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

  • Ferroelectrics
  • Hafnium oxide
  • NVM
  • Negative capacitance

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