Abstract
We report the first unambiguous ferroelectric properties of ultra-thin-walled Pb(Zr,Ti)O3 (PZT) nanotube arrays, each with 5 nm thick walls and outer diameters of 50 nm. Ferroelectric switching behavior with well-saturated hysteresis loops is observed in these ferroelectric PZT nanotubes with Pr and Ec values of about 1.5 μC cm-2 and 86 kV cm-1, respectively, for a maximum applied electric field of 400 kV cm-1. These PZT nanotube arrays(1012 nanotubes cm-2) might provide a competitive approach toward the development of three-dimensional capacitors for the terabyte ferroelectric random access memory.
Original language | English |
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Pages (from-to) | 1813-1818 |
Number of pages | 6 |
Journal | Nano Letters |
Volume | 8 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2008 |