Far infrared transmission of SmTe under high pressure

Y. S. Kwon; T. S. Park; J. M. Kim; K. S. An; I. S. Jeon; C. Y. Park; S. Kimura; T. Nanba; T. Matsumura; T. Suzuki

doi:10.1016/0921-4526(94)00468-B

Far infrared transmission of SmTe under high pressure

Y. S. Kwon, T. S. Park, J. M. Kim, K. S. An, I. S. Jeon, C. Y. Park, S. Kimura, T. Nanba, T. Matsumura, T. Suzuki

Department of Physics and Chemistry

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3 Scopus citations

Abstract

We measured the transmission spectra of SmTe under several pressures in the energy region between 40 and 320 cm^-1 at 300 and 100 K. At P = 0 GPa a strong absorption appears from 90 to 190 cm^-1 at 300 K and 100 to 165 cm^-1 at 110 K. This indicates that ω_TO increases with temperature and ω_LO decreases with increasing temperature. Another absorption appears at around 290 cm^-1 with the half width of 20 cm^-1. The possibility for its origin is considered as two methods. One seems to be due to the two phonon process. The other seems to be due to a magnetic quasi-particle such as a magnetic polaron. We found that the semiconductor-metal transition in SmTe occurs at 3.5 GPa.

Original language	English
Pages (from-to)	389-391
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	206-207
Issue number	C
DOIs	https://doi.org/10.1016/0921-4526(94)00468-B
State	Published - 1 Feb 1995

Bibliographical note

Funding Information:
This work was supported by the user training program of Pohang Light Source (PLS), Korea. The

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title = "Far infrared transmission of SmTe under high pressure",

abstract = "We measured the transmission spectra of SmTe under several pressures in the energy region between 40 and 320 cm-1 at 300 and 100 K. At P = 0 GPa a strong absorption appears from 90 to 190 cm-1 at 300 K and 100 to 165 cm-1 at 110 K. This indicates that ωTO increases with temperature and ωLO decreases with increasing temperature. Another absorption appears at around 290 cm-1 with the half width of 20 cm-1. The possibility for its origin is considered as two methods. One seems to be due to the two phonon process. The other seems to be due to a magnetic quasi-particle such as a magnetic polaron. We found that the semiconductor-metal transition in SmTe occurs at 3.5 GPa.",

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note = "Funding Information: This work was supported by the user training program of Pohang Light Source (PLS), Korea. The",

year = "1995",

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doi = "10.1016/0921-4526(94)00468-B",

language = "English",

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pages = "389--391",

journal = "Physica B: Condensed Matter",

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TY - JOUR

T1 - Far infrared transmission of SmTe under high pressure

AU - Kwon, Y. S.

AU - Park, T. S.

AU - Kim, J. M.

AU - An, K. S.

AU - Jeon, I. S.

AU - Park, C. Y.

AU - Kimura, S.

AU - Nanba, T.

AU - Matsumura, T.

AU - Suzuki, T.

N1 - Funding Information: This work was supported by the user training program of Pohang Light Source (PLS), Korea. The

PY - 1995/2/1

Y1 - 1995/2/1

N2 - We measured the transmission spectra of SmTe under several pressures in the energy region between 40 and 320 cm-1 at 300 and 100 K. At P = 0 GPa a strong absorption appears from 90 to 190 cm-1 at 300 K and 100 to 165 cm-1 at 110 K. This indicates that ωTO increases with temperature and ωLO decreases with increasing temperature. Another absorption appears at around 290 cm-1 with the half width of 20 cm-1. The possibility for its origin is considered as two methods. One seems to be due to the two phonon process. The other seems to be due to a magnetic quasi-particle such as a magnetic polaron. We found that the semiconductor-metal transition in SmTe occurs at 3.5 GPa.

AB - We measured the transmission spectra of SmTe under several pressures in the energy region between 40 and 320 cm-1 at 300 and 100 K. At P = 0 GPa a strong absorption appears from 90 to 190 cm-1 at 300 K and 100 to 165 cm-1 at 110 K. This indicates that ωTO increases with temperature and ωLO decreases with increasing temperature. Another absorption appears at around 290 cm-1 with the half width of 20 cm-1. The possibility for its origin is considered as two methods. One seems to be due to the two phonon process. The other seems to be due to a magnetic quasi-particle such as a magnetic polaron. We found that the semiconductor-metal transition in SmTe occurs at 3.5 GPa.

UR - https://www.scopus.com/pages/publications/0029244770

U2 - 10.1016/0921-4526(94)00468-B

DO - 10.1016/0921-4526(94)00468-B

M3 - Article

AN - SCOPUS:0029244770

SN - 0921-4526

VL - 206-207

SP - 389

EP - 391

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - C

ER -

Far infrared transmission of SmTe under high pressure

Abstract

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