Abstract
We have fabricated Co-doped bilayered SrFe2As2 thin films on Al2O3 (0 0 0 1) and LaAlO3 (0 0 1) substrates by using a pulsed laser deposition (PLD) technique with a 248-nm-wavelength KrF excimer laser. In order to fabricate Co-doped SrFe 2As2 thin films, we used homemade target with an As-rich phase. We tried to find optimum growth condition by changing various experimental conditions, such as substrate temperature and laser energy density. The superconducting transition temperatures were influenced by growth temperature, but hardly affected by laser energy density. The best sample showed the Tc of ∼20 K with a narrow superconducting transition width of 2.2 K.
Original language | English |
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Pages (from-to) | S511-S512 |
Journal | Physica C: Superconductivity and its applications |
Volume | 470 |
Issue number | SUPPL.1 |
DOIs | |
State | Published - Dec 2010 |
Bibliographical note
Funding Information:This work was supported by the Korea Science and Engineering Foundation (KOSEF) Grant funded by the Korea Government (MEST, No. R01-2008-000-20586-0 ) and by a Grant ( R-2006-1-248 ) from Electric Power Industry Technology Evaluation and Planning (ETEP), Republic of Korea.
Keywords
- Co-doped SrFeAs
- Iron-based superconductor
- Pulsed laser deposition
- Thin film