Fabrication of 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel

Geunbae Lim; Chin Sung Park; Hong Kun Lyu; Dong Sun Kim; Yong Taek Jeong; Hey Jung Park; Hyoung Sik Kim; Jang Kyoo Shin; Pyung Choi; Jong Hyun Lee

doi:10.1109/IMNC.2002.1178679

Fabrication of 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel

Geunbae Lim, Chin Sung Park, Hong Kun Lyu, Dong Sun Kim, Yong Taek Jeong, Hey Jung Park, Hyoung Sik Kim, Jang Kyoo Shin, Pyung Choi, Jong Hyun Lee

Division of Electronics & Information System

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The purpose of this work is to develop a new 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel (μchannel). In this paper, we will present the fabrication process and the electrical characteristics of the 3-dimensional structure MOSFET which will be useful for biochemical detection.

Original language	English
Title of host publication	2002 International Microprocesses and Nanotechnology Conference, MNC 2002
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	334-335
Number of pages	2
ISBN (Electronic)	4891140313, 9784891140311
DOIs	https://doi.org/10.1109/IMNC.2002.1178679
State	Published - 2002
Event	International Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan Duration: 6 Nov 2002 → 8 Nov 2002

Publication series

Name	2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Conference

Conference	International Microprocesses and Nanotechnology Conference, MNC 2002
Country/Territory	Japan
City	Tokyo
Period	6/11/02 → 8/11/02

Bibliographical note

Publisher Copyright:
© 2002 IEEE.

Access to Document

10.1109/IMNC.2002.1178679

Cite this

Lim, G., Park, C. S., Lyu, H. K., Kim, D. S., Jeong, Y. T., Park, H. J., Kim, H. S., Shin, J. K., Choi, P., & Lee, J. H. (2002). Fabrication of 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002 (pp. 334-335). Article 1178679 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2002.1178679

Lim, Geunbae ; Park, Chin Sung ; Lyu, Hong Kun et al. / Fabrication of 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel. 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 334-335 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

@inproceedings{4f5b2b7f41d54aaca5d7c4154f33ef79,

title = "Fabrication of 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel",

abstract = "The purpose of this work is to develop a new 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel (μchannel). In this paper, we will present the fabrication process and the electrical characteristics of the 3-dimensional structure MOSFET which will be useful for biochemical detection.",

author = "Geunbae Lim and Park, {Chin Sung} and Lyu, {Hong Kun} and Kim, {Dong Sun} and Jeong, {Yong Taek} and Park, {Hey Jung} and Kim, {Hyoung Sik} and Shin, {Jang Kyoo} and Pyung Choi and Lee, {Jong Hyun}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; International Microprocesses and Nanotechnology Conference, MNC 2002 ; Conference date: 06-11-2002 Through 08-11-2002",

year = "2002",

doi = "10.1109/IMNC.2002.1178679",

language = "English",

series = "2002 International Microprocesses and Nanotechnology Conference, MNC 2002",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "334--335",

booktitle = "2002 International Microprocesses and Nanotechnology Conference, MNC 2002",

}

Lim, G, Park, CS, Lyu, HK, Kim, DS, Jeong, YT, Park, HJ, Kim, HS, Shin, JK, Choi, P & Lee, JH 2002, Fabrication of 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel. in 2002 International Microprocesses and Nanotechnology Conference, MNC 2002., 1178679, 2002 International Microprocesses and Nanotechnology Conference, MNC 2002, Institute of Electrical and Electronics Engineers Inc., pp. 334-335, International Microprocesses and Nanotechnology Conference, MNC 2002, Tokyo, Japan, 6/11/02. https://doi.org/10.1109/IMNC.2002.1178679

Fabrication of 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel. / Lim, Geunbae; Park, Chin Sung; Lyu, Hong Kun et al.
2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc., 2002. p. 334-335 1178679 (2002 International Microprocesses and Nanotechnology Conference, MNC 2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel

AU - Lim, Geunbae

AU - Park, Chin Sung

AU - Lyu, Hong Kun

AU - Kim, Dong Sun

AU - Jeong, Yong Taek

AU - Park, Hey Jung

AU - Kim, Hyoung Sik

AU - Shin, Jang Kyoo

AU - Choi, Pyung

AU - Lee, Jong Hyun

PY - 2002

Y1 - 2002

N2 - The purpose of this work is to develop a new 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel (μchannel). In this paper, we will present the fabrication process and the electrical characteristics of the 3-dimensional structure MOSFET which will be useful for biochemical detection.

AB - The purpose of this work is to develop a new 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel (μchannel). In this paper, we will present the fabrication process and the electrical characteristics of the 3-dimensional structure MOSFET which will be useful for biochemical detection.

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DO - 10.1109/IMNC.2002.1178679

M3 - Conference contribution

AN - SCOPUS:84960382738

T3 - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

SP - 334

EP - 335

BT - 2002 International Microprocesses and Nanotechnology Conference, MNC 2002

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Microprocesses and Nanotechnology Conference, MNC 2002

Y2 - 6 November 2002 through 8 November 2002

ER -

Lim G, Park CS, Lyu HK, Kim DS, Jeong YT, Park HJ et al. Fabrication of 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel. In 2002 International Microprocesses and Nanotechnology Conference, MNC 2002. Institute of Electrical and Electronics Engineers Inc. 2002. p. 334-335. 1178679. (2002 International Microprocesses and Nanotechnology Conference, MNC 2002). doi: 10.1109/IMNC.2002.1178679

Fabrication of 3-dimensional structure MOSFET embodied in the convex corner of the silicon microfluidic channel

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