TY - GEN
T1 - Fabrication and optimization of Al-doped zinc oxide layer for application in radial p-n junction silicon solar cells
AU - Baek, Seong Ho
AU - Kim, Jae Hyun
AU - Shin, Jang Kyoo
PY - 2010
Y1 - 2010
N2 - The influence of thickness of optimized Al-doped zinc oxide (AZO) front contact layer on an efficiency of a radial p-n junction silicon (Si) solar cell has been studied. Vertically aligned Si wire arrays for the radial p-n junction solar device were fabricated by metal catalytic etching and p-n junction was prepared by spin-on-dopant (SOD) diffusion method. AZO thin films as a top contact layer were conformally deposited on the radial p-n junction Si solar cell by atomic layer deposition (ALD) technique. To determine the best conversion efficiency, the thickness of AZO thin film varied from 15 nm to 80nm. Both short circuit current (Jsc) and power conversion efficiency (η) of the cell increased as the thickness of AZO film is changed from 15nm to 48nm, but decreased at the AZO thicknesses exceeding 48nm. The conversion efficiency of the best sample is 5.6% and Jsc of 22.2mA/cm2, when the thickness of AZO front contact is 48nm. It is considered that the optimized AZO contact layer plays a role of increasing photocurrent by lowering contact resistance and surface recombination centers.
AB - The influence of thickness of optimized Al-doped zinc oxide (AZO) front contact layer on an efficiency of a radial p-n junction silicon (Si) solar cell has been studied. Vertically aligned Si wire arrays for the radial p-n junction solar device were fabricated by metal catalytic etching and p-n junction was prepared by spin-on-dopant (SOD) diffusion method. AZO thin films as a top contact layer were conformally deposited on the radial p-n junction Si solar cell by atomic layer deposition (ALD) technique. To determine the best conversion efficiency, the thickness of AZO thin film varied from 15 nm to 80nm. Both short circuit current (Jsc) and power conversion efficiency (η) of the cell increased as the thickness of AZO film is changed from 15nm to 48nm, but decreased at the AZO thicknesses exceeding 48nm. The conversion efficiency of the best sample is 5.6% and Jsc of 22.2mA/cm2, when the thickness of AZO front contact is 48nm. It is considered that the optimized AZO contact layer plays a role of increasing photocurrent by lowering contact resistance and surface recombination centers.
UR - http://www.scopus.com/inward/record.url?scp=78650114067&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5615899
DO - 10.1109/PVSC.2010.5615899
M3 - Conference contribution
AN - SCOPUS:78650114067
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1788
EP - 1792
BT - Program - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -