Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnO x/Pt and the effect of TiN layer on the improved resistance switching characteristics

K. H. Kim; S. R. Lee; S. E. Ahn; M. J. Lee; B. S. Kang

doi:10.1016/j.tsf.2011.09.040

Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnO _x/Pt and the effect of TiN layer on the improved resistance switching characteristics

K. H. Kim, S. R. Lee, S. E. Ahn, M. J. Lee, B. S. Kang

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We investigated the electrical properties of oxide-based one diode/one resistor (1D-1R) memory cells for resistance switching memory device application employing NiO as a storage element and p-CuO/n-InZnO _x diode as a steering element. The electrical property of the 1D-1R memory cells was significantly affected by the repetitive resistance switching operation of the NiO layer. It appears that oxygen vacancy movement from NiO layer leads to the degradation of the oxide diode. We introduced a conducting TiN layer as a diffusion barrier between the diode and the NiO. As a result, the reliability of the 1D-1R memory cells was significantly improved.

Original language	English
Pages (from-to)	2272-2277
Number of pages	6
Journal	Thin Solid Films
Volume	520
Issue number	6
DOIs	https://doi.org/10.1016/j.tsf.2011.09.040
State	Published - 1 Jan 2012

Bibliographical note

Funding Information:
This work was supported by the research fund of Hanyang University (HY-2009-N). The authors acknowledge Dr. J. B. Park, Mr. C. B. Lee, Dr. D. S. Lee, Dr. Y.-B. Kim, and Dr. C. J. Kim for the helpful discussion.

Keywords

Diffusion
Nonvolatile memory
Oxygen vacancy
Resistance switching

Access to Document

10.1016/j.tsf.2011.09.040

Cite this

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title = "Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnO x/Pt and the effect of TiN layer on the improved resistance switching characteristics",

abstract = "We investigated the electrical properties of oxide-based one diode/one resistor (1D-1R) memory cells for resistance switching memory device application employing NiO as a storage element and p-CuO/n-InZnO x diode as a steering element. The electrical property of the 1D-1R memory cells was significantly affected by the repetitive resistance switching operation of the NiO layer. It appears that oxygen vacancy movement from NiO layer leads to the degradation of the oxide diode. We introduced a conducting TiN layer as a diffusion barrier between the diode and the NiO. As a result, the reliability of the 1D-1R memory cells was significantly improved.",

keywords = "Diffusion, Nonvolatile memory, Oxygen vacancy, Resistance switching",

author = "Kim, {K. H.} and Lee, {S. R.} and Ahn, {S. E.} and Lee, {M. J.} and Kang, {B. S.}",

note = "Funding Information: This work was supported by the research fund of Hanyang University (HY-2009-N). The authors acknowledge Dr. J. B. Park, Mr. C. B. Lee, Dr. D. S. Lee, Dr. Y.-B. Kim, and Dr. C. J. Kim for the helpful discussion.",

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doi = "10.1016/j.tsf.2011.09.040",

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T1 - Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnO x/Pt and the effect of TiN layer on the improved resistance switching characteristics

AU - Kim, K. H.

AU - Lee, S. R.

AU - Ahn, S. E.

AU - Lee, M. J.

AU - Kang, B. S.

N1 - Funding Information: This work was supported by the research fund of Hanyang University (HY-2009-N). The authors acknowledge Dr. J. B. Park, Mr. C. B. Lee, Dr. D. S. Lee, Dr. Y.-B. Kim, and Dr. C. J. Kim for the helpful discussion.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - We investigated the electrical properties of oxide-based one diode/one resistor (1D-1R) memory cells for resistance switching memory device application employing NiO as a storage element and p-CuO/n-InZnO x diode as a steering element. The electrical property of the 1D-1R memory cells was significantly affected by the repetitive resistance switching operation of the NiO layer. It appears that oxygen vacancy movement from NiO layer leads to the degradation of the oxide diode. We introduced a conducting TiN layer as a diffusion barrier between the diode and the NiO. As a result, the reliability of the 1D-1R memory cells was significantly improved.

AB - We investigated the electrical properties of oxide-based one diode/one resistor (1D-1R) memory cells for resistance switching memory device application employing NiO as a storage element and p-CuO/n-InZnO x diode as a steering element. The electrical property of the 1D-1R memory cells was significantly affected by the repetitive resistance switching operation of the NiO layer. It appears that oxygen vacancy movement from NiO layer leads to the degradation of the oxide diode. We introduced a conducting TiN layer as a diffusion barrier between the diode and the NiO. As a result, the reliability of the 1D-1R memory cells was significantly improved.

KW - Diffusion

KW - Nonvolatile memory

KW - Oxygen vacancy

KW - Resistance switching

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DO - 10.1016/j.tsf.2011.09.040

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