TY - JOUR
T1 - Extremely Vivid, Highly Transparent, and Ultrathin Quantum Dot Light-Emitting Diodes
AU - Choi, Moon Kee
AU - Yang, Jiwoong
AU - Kim, Dong Chan
AU - Dai, Zhaohe
AU - Kim, Junhee
AU - Seung, Hyojin
AU - Kale, Vinayak S.
AU - Sung, Sae Jin
AU - Park, Chong Rae
AU - Lu, Nanshu
AU - Hyeon, Taeghwan
AU - Kim, Dae Hyeong
N1 - Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/1/4
Y1 - 2018/1/4
N2 - Displaying information on transparent screens offers new opportunities in next-generation electronics, such as augmented reality devices, smart surgical glasses, and smart windows. Outstanding luminance and transparency are essential for such “see-through” displays to show vivid images over clear background view. Here transparent quantum dot light-emitting diodes (Tr-QLEDs) are reported with high brightness (bottom: ≈43 000 cd m−2, top: ≈30 000 cd m−2, total: ≈73 000 cd m−2 at 9 V), excellent transmittance (90% at 550 nm, 84% over visible range), and an ultrathin form factor (≈2.7 µm thickness). These superb characteristics are accomplished by novel electron transport layers (ETLs) and engineered quantum dots (QDs). The ETLs, ZnO nanoparticle assemblies with ultrathin alumina overlayers, dramatically enhance durability of active layers, and balance electron/hole injection into QDs, which prevents nonradiative recombination processes. In addition, the QD structure is further optimized to fully exploit the device architecture. The ultrathin nature of Tr-QLEDs allows their conformal integration on various shaped objects. Finally, the high resolution patterning of red, green, and blue Tr-QLEDs (513 pixels in.−1) shows the potential of the full-color transparent display.
AB - Displaying information on transparent screens offers new opportunities in next-generation electronics, such as augmented reality devices, smart surgical glasses, and smart windows. Outstanding luminance and transparency are essential for such “see-through” displays to show vivid images over clear background view. Here transparent quantum dot light-emitting diodes (Tr-QLEDs) are reported with high brightness (bottom: ≈43 000 cd m−2, top: ≈30 000 cd m−2, total: ≈73 000 cd m−2 at 9 V), excellent transmittance (90% at 550 nm, 84% over visible range), and an ultrathin form factor (≈2.7 µm thickness). These superb characteristics are accomplished by novel electron transport layers (ETLs) and engineered quantum dots (QDs). The ETLs, ZnO nanoparticle assemblies with ultrathin alumina overlayers, dramatically enhance durability of active layers, and balance electron/hole injection into QDs, which prevents nonradiative recombination processes. In addition, the QD structure is further optimized to fully exploit the device architecture. The ultrathin nature of Tr-QLEDs allows their conformal integration on various shaped objects. Finally, the high resolution patterning of red, green, and blue Tr-QLEDs (513 pixels in.−1) shows the potential of the full-color transparent display.
KW - light-emitting diodes
KW - quantum dots
KW - transparent displays
KW - ultrathin electronics
KW - wearable electronics
UR - https://www.scopus.com/pages/publications/85032287702
U2 - 10.1002/adma.201703279
DO - 10.1002/adma.201703279
M3 - Article
C2 - 29068560
AN - SCOPUS:85032287702
SN - 0935-9648
VL - 30
JO - Advanced Materials
JF - Advanced Materials
IS - 1
M1 - 1703279
ER -