Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications

Dongsoo Lee; Dong Jun Seong; Hye Jung Choi; Inhwa Jo; R. Dong; W. Xiang; Seokjoon Oh; Myeongbum Pyun; Sun Ok Seo; Seongho Heo; Minseok Jo; Dae Kyu Hwang; H. K. Park; M. Chang; M. Hasan; Hyunsang Hwang

doi:10.1109/IEDM.2006.346733

Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications

Dongsoo Lee, Dong Jun Seong, Hye Jung Choi, Inhwa Jo, R. Dong, W. Xiang, Seokjoon Oh, Myeongbum Pyun, Sun Ok Seo, Seongho Heo, Minseok Jo, Dae Kyu Hwang, H. K. Park, M. Chang, M. Hasan, Hyunsang Hwang

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

55 Scopus citations

Abstract

We have investigated various doped metal oxides such as copper doped molybdenum oxide, copper doped AI₂.O₃, copper doped ZrO₂, aluminium doped ZnO, and Cu_xO for novel resistance memory applications. Compared with non-stoichiometric oxides (Nb ₂O_5-x, ZrO_x, SrTiO_x), doped metal oxides show higher device yield. Moreover, Cu: MoO_x have demonstrated excellent memory characteristics such as reliability under programming cycles, potential multi-bit operation, good data retention, highly scalable property, and fast switching speed. The switching mechanism of the copper doped molybdenum oxide can be explained by the generation and rupture of multi-filaments under the electrical stress.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346733
State	Published - 2006
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: 10 Dec 2006 → 13 Dec 2006

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2006 International Electron Devices Meeting, IEDM
Country/Territory	United States
City	San Francisco, CA
Period	10/12/06 → 13/12/06

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10.1109/IEDM.2006.346733

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Lee, D., Seong, D. J., Choi, H. J., Jo, I., Dong, R., Xiang, W., Oh, S., Pyun, M., Seo, S. O., Heo, S., Jo, M., Hwang, D. K., Park, H. K., Chang, M., Hasan, M., & Hwang, H. (2006). Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications. In 2006 International Electron Devices Meeting Technical Digest, IEDM Article 4154334 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346733

@inproceedings{d2993458b908417ebd21e986771d70a9,

title = "Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications",

abstract = "We have investigated various doped metal oxides such as copper doped molybdenum oxide, copper doped AI2.O3, copper doped ZrO2, aluminium doped ZnO, and CuxO for novel resistance memory applications. Compared with non-stoichiometric oxides (Nb 2O5-x, ZrOx, SrTiOx), doped metal oxides show higher device yield. Moreover, Cu: MoOx have demonstrated excellent memory characteristics such as reliability under programming cycles, potential multi-bit operation, good data retention, highly scalable property, and fast switching speed. The switching mechanism of the copper doped molybdenum oxide can be explained by the generation and rupture of multi-filaments under the electrical stress.",

author = "Dongsoo Lee and Seong, \{Dong Jun\} and Choi, \{Hye Jung\} and Inhwa Jo and R. Dong and W. Xiang and Seokjoon Oh and Myeongbum Pyun and Seo, \{Sun Ok\} and Seongho Heo and Minseok Jo and Hwang, \{Dae Kyu\} and Park, \{H. K.\} and M. Chang and M. Hasan and Hyunsang Hwang",

year = "2006",

doi = "10.1109/IEDM.2006.346733",

language = "English",

isbn = "1424404398",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",

note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",

}

Lee, D, Seong, DJ, Choi, HJ, Jo, I, Dong, R, Xiang, W, Oh, S, Pyun, M, Seo, SO, Heo, S, Jo, M, Hwang, DK, Park, HK, Chang, M, Hasan, M & Hwang, H 2006, Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154334, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 10/12/06. https://doi.org/10.1109/IEDM.2006.346733

Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications. / Lee, Dongsoo; Seong, Dong Jun; Choi, Hye Jung et al.
2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154334 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications

AU - Lee, Dongsoo

AU - Seong, Dong Jun

AU - Choi, Hye Jung

AU - Jo, Inhwa

AU - Dong, R.

AU - Xiang, W.

AU - Oh, Seokjoon

AU - Pyun, Myeongbum

AU - Seo, Sun Ok

AU - Heo, Seongho

AU - Jo, Minseok

AU - Hwang, Dae Kyu

AU - Park, H. K.

AU - Chang, M.

AU - Hasan, M.

AU - Hwang, Hyunsang

PY - 2006

Y1 - 2006

N2 - We have investigated various doped metal oxides such as copper doped molybdenum oxide, copper doped AI2.O3, copper doped ZrO2, aluminium doped ZnO, and CuxO for novel resistance memory applications. Compared with non-stoichiometric oxides (Nb 2O5-x, ZrOx, SrTiOx), doped metal oxides show higher device yield. Moreover, Cu: MoOx have demonstrated excellent memory characteristics such as reliability under programming cycles, potential multi-bit operation, good data retention, highly scalable property, and fast switching speed. The switching mechanism of the copper doped molybdenum oxide can be explained by the generation and rupture of multi-filaments under the electrical stress.

AB - We have investigated various doped metal oxides such as copper doped molybdenum oxide, copper doped AI2.O3, copper doped ZrO2, aluminium doped ZnO, and CuxO for novel resistance memory applications. Compared with non-stoichiometric oxides (Nb 2O5-x, ZrOx, SrTiOx), doped metal oxides show higher device yield. Moreover, Cu: MoOx have demonstrated excellent memory characteristics such as reliability under programming cycles, potential multi-bit operation, good data retention, highly scalable property, and fast switching speed. The switching mechanism of the copper doped molybdenum oxide can be explained by the generation and rupture of multi-filaments under the electrical stress.

UR - https://www.scopus.com/pages/publications/46049092606

U2 - 10.1109/IEDM.2006.346733

DO - 10.1109/IEDM.2006.346733

M3 - Conference contribution

AN - SCOPUS:46049092606

SN - 1424404398

SN - 9781424404391

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2006 International Electron Devices Meeting Technical Digest, IEDM

T2 - 2006 International Electron Devices Meeting, IEDM

Y2 - 10 December 2006 through 13 December 2006

ER -

Lee D, Seong DJ, Choi HJ, Jo I, Dong R, Xiang W et al. Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications. In 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154334. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2006.346733

Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications

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