Excellent thermal stability of Al2O3/ZrO 2/Al2O3 stack structure for metal-oxide-semiconductor gate dielectrics application

Hyo Sik Chang; Sanghun Jeon; Hyunsang Hwang; Dae Won Moon

doi:10.1063/1.1477266

Excellent thermal stability of Al₂O₃/ZrO ₂/Al₂O₃ stack structure for metal-oxide-semiconductor gate dielectrics application

Hyo Sik Chang
, Sanghun Jeon
, Hyunsang Hwang
, Dae Won Moon

Department of New Biology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

The thermal stability of a nanolaminate (Al₂O ₃/ZrO₂/Al₂O₃) gate stack prepared by atomic layer chemical vapor deposition was investigated using medium-energy ion scattering spectroscopy, and x-ray photoelectron spectroscopy. We observed that the structure was stable up to 1000°C under ultrahigh vacuum conditions. However, annealing in a nitrogen or oxygen ambient at 1 atm yielded the formation of an interfacial Zr-Al silicate layer at much lower temperatures. The growth of the interfacial silicate layer could be significantly reduced during furnace annealing via the use of plasma nitridation.

Original language	English
Pages (from-to)	3385-3387
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	18
DOIs	https://doi.org/10.1063/1.1477266
State	Published - 6 May 2002

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title = "Excellent thermal stability of Al2O3/ZrO 2/Al2O3 stack structure for metal-oxide-semiconductor gate dielectrics application",

abstract = "The thermal stability of a nanolaminate (Al2O 3/ZrO2/Al2O3) gate stack prepared by atomic layer chemical vapor deposition was investigated using medium-energy ion scattering spectroscopy, and x-ray photoelectron spectroscopy. We observed that the structure was stable up to 1000°C under ultrahigh vacuum conditions. However, annealing in a nitrogen or oxygen ambient at 1 atm yielded the formation of an interfacial Zr-Al silicate layer at much lower temperatures. The growth of the interfacial silicate layer could be significantly reduced during furnace annealing via the use of plasma nitridation.",

author = "Chang, \{Hyo Sik\} and Sanghun Jeon and Hyunsang Hwang and Moon, \{Dae Won\}",

year = "2002",

month = may,

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doi = "10.1063/1.1477266",

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journal = "Applied Physics Letters",

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T1 - Excellent thermal stability of Al2O3/ZrO 2/Al2O3 stack structure for metal-oxide-semiconductor gate dielectrics application

AU - Chang, Hyo Sik

AU - Jeon, Sanghun

AU - Hwang, Hyunsang

AU - Moon, Dae Won

PY - 2002/5/6

Y1 - 2002/5/6

N2 - The thermal stability of a nanolaminate (Al2O 3/ZrO2/Al2O3) gate stack prepared by atomic layer chemical vapor deposition was investigated using medium-energy ion scattering spectroscopy, and x-ray photoelectron spectroscopy. We observed that the structure was stable up to 1000°C under ultrahigh vacuum conditions. However, annealing in a nitrogen or oxygen ambient at 1 atm yielded the formation of an interfacial Zr-Al silicate layer at much lower temperatures. The growth of the interfacial silicate layer could be significantly reduced during furnace annealing via the use of plasma nitridation.

AB - The thermal stability of a nanolaminate (Al2O 3/ZrO2/Al2O3) gate stack prepared by atomic layer chemical vapor deposition was investigated using medium-energy ion scattering spectroscopy, and x-ray photoelectron spectroscopy. We observed that the structure was stable up to 1000°C under ultrahigh vacuum conditions. However, annealing in a nitrogen or oxygen ambient at 1 atm yielded the formation of an interfacial Zr-Al silicate layer at much lower temperatures. The growth of the interfacial silicate layer could be significantly reduced during furnace annealing via the use of plasma nitridation.

UR - https://www.scopus.com/pages/publications/79955985174

U2 - 10.1063/1.1477266

DO - 10.1063/1.1477266

M3 - Article

AN - SCOPUS:79955985174

SN - 0003-6951

VL - 80

SP - 3385

EP - 3387

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Excellent thermal stability of Al₂O₃/ZrO ₂/Al₂O₃ stack structure for metal-oxide-semiconductor gate dielectrics application

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