Excellent low loss performance of microwave permeability in high resistive CoFeHfO films by thermal annealing

Dong Young Kim; Seok Soo Yoon; B. Parvatheeswara Rao; Cheol Gi Kim; Ki Hyeon Kim; M. Takahashi

doi:10.1109/TMAG.2008.2001627

Excellent low loss performance of microwave permeability in high resistive CoFeHfO films by thermal annealing

Dong Young Kim, Seok Soo Yoon, B. Parvatheeswara Rao, Cheol Gi Kim, Ki Hyeon Kim, M. Takahashi

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This paper reports on the thermal field annealing effect of microwave permeabilities in CoFeHfO thin films. For the high resistive optimized Co ₁₉ Fe₅₃ Hf₈ O₂₀ thin films annealed at 150° C, apart from excellent magnetic performance very low Gilbert damping constants (α < 0.017) are obtained up to film thickness of 437 nm. The results are interpreted in terms of changes in microstructure leading to structural relaxation effect and evolution of nanocrystalline Co(Fe) precipitates out of thermal field annealing. These materials with excellent low loss performance are obviously the most promising candidates for microwave device applications.

Original language	English
Pages (from-to)	3115-3118
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	44
Issue number	11
DOIs	https://doi.org/10.1109/TMAG.2008.2001627
State	Published - 1 Nov 2008

Bibliographical note

Funding Information:
This work was supported by the Korean Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at the Chungnam National University.

Keywords

Amorphous
CoFeHfO
Low loss
Microwave permeability

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10.1109/TMAG.2008.2001627

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title = "Excellent low loss performance of microwave permeability in high resistive CoFeHfO films by thermal annealing",

abstract = "This paper reports on the thermal field annealing effect of microwave permeabilities in CoFeHfO thin films. For the high resistive optimized Co 19 Fe53 Hf8 O20 thin films annealed at 150° C, apart from excellent magnetic performance very low Gilbert damping constants (α < 0.017) are obtained up to film thickness of 437 nm. The results are interpreted in terms of changes in microstructure leading to structural relaxation effect and evolution of nanocrystalline Co(Fe) precipitates out of thermal field annealing. These materials with excellent low loss performance are obviously the most promising candidates for microwave device applications.",

keywords = "Amorphous, CoFeHfO, Low loss, Microwave permeability",

author = "Kim, {Dong Young} and Yoon, {Seok Soo} and {Parvatheeswara Rao}, B. and Kim, {Cheol Gi} and Kim, {Ki Hyeon} and M. Takahashi",

note = "Funding Information: This work was supported by the Korean Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at the Chungnam National University.",

year = "2008",

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doi = "10.1109/TMAG.2008.2001627",

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AU - Kim, Dong Young

AU - Yoon, Seok Soo

AU - Parvatheeswara Rao, B.

AU - Kim, Cheol Gi

AU - Kim, Ki Hyeon

AU - Takahashi, M.

N1 - Funding Information: This work was supported by the Korean Science and Engineering Foundation through the Research Center for Advanced Magnetic Materials at the Chungnam National University.

PY - 2008/11/1

Y1 - 2008/11/1

N2 - This paper reports on the thermal field annealing effect of microwave permeabilities in CoFeHfO thin films. For the high resistive optimized Co 19 Fe53 Hf8 O20 thin films annealed at 150° C, apart from excellent magnetic performance very low Gilbert damping constants (α < 0.017) are obtained up to film thickness of 437 nm. The results are interpreted in terms of changes in microstructure leading to structural relaxation effect and evolution of nanocrystalline Co(Fe) precipitates out of thermal field annealing. These materials with excellent low loss performance are obviously the most promising candidates for microwave device applications.

AB - This paper reports on the thermal field annealing effect of microwave permeabilities in CoFeHfO thin films. For the high resistive optimized Co 19 Fe53 Hf8 O20 thin films annealed at 150° C, apart from excellent magnetic performance very low Gilbert damping constants (α < 0.017) are obtained up to film thickness of 437 nm. The results are interpreted in terms of changes in microstructure leading to structural relaxation effect and evolution of nanocrystalline Co(Fe) precipitates out of thermal field annealing. These materials with excellent low loss performance are obviously the most promising candidates for microwave device applications.

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Excellent low loss performance of microwave permeability in high resistive CoFeHfO films by thermal annealing

Abstract

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Keywords

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