@inproceedings{d323d355c62c48a8adb90a3c682fa226,
title = "Etching effect on exchange anisotropy in NiFe/Cu/NiFe/IrMn spin-valve structure for an array of PHR sensor element",
abstract = "Ar ion beam etching was carried out on NiFe(6)/Cu(1.5)/NiFe(4)/IrMn(20) multilayer spin-valve structure with three different beam voltages in order to optimize the effective beam voltage for patterned Planar Hall device fabrication. VSM characterizations were done on the multilayer structure before and after etching for verification of necessary exchange bias and influence of etching. The multilayer spin-valve structure exhibits exchange bias of 202 Oe for as deposited sample whereas it enhances to 314 Oe after etching for the etching beam voltage of 800 V. Similarly, the corresponding coercivity of the spin-valve structure before etchings is 113 Oe while it is increased to 179 Oe after ion beam etching. Ar ion beam etching was done for subsequent fabrication of patterned junctions of different dimensions of 50×50 μm2, 20×20 μm2 and 5×5 μm2 using lithography. The PHE measurements were made on all three junctions. Sensitivity has bee found to be more as the size of the patterned junction becomes smaller and smaller.",
keywords = "Exchange anisotropy, Field sensitivity, PHR curve, Planar hall resistance, Spin-valve multilayer",
author = "Oh, \{Sun J.\} and Le, \{Tuan Tu\} and \{Ananda Kumar\}, S. and Kim, \{G. W.\} and \{Parvatheeswara Rao\}, B. and Kim, \{Cheol Gi\}",
year = "2007",
doi = "10.1109/NEMS.2007.352230",
language = "English",
isbn = "1424406102",
series = "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007",
pages = "1183--1185",
booktitle = "Proceedings of the 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007",
note = "2007 2nd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2007 ; Conference date: 16-01-2007 Through 19-01-2007",
}