Estimation of the electronic straggling using delta-doped multilayers

D. W. Moon; H. I. Lee; K. J. Kim; T. Nishimura; Y. Kido

doi:10.1016/S0168-583X(01)00636-X

Estimation of the electronic straggling using delta-doped multilayers

D. W. Moon, H. I. Lee, K. J. Kim, T. Nishimura, Y. Kido

Department of New Biology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

It is proposed that the electronic straggling of projectile ion beams for medium energy ion scattering spectroscopy (MEIS) can be estimated with delta-doped multilayers. From the depth dependence of the full width half maximum (FWHM) of the Ta peak of a Ta delta-doped Si multilayer, the electronic straggling of 100 keV H⁺ in Si could be estimated. The electronic straggling can be estimated without information on the exact thickness and the interface abruptness of the Ta delta-doped multilayers. The reduced electronic straggling, Ω_e/Ω_B was estimated to be 0.59. With the experimentally determined electronic straggling, the thickness of the Ta delta layer could be estimated and compared with the nominal thickness based on the growth rate determined by transmission electron microscopy (TEM).

Original language	English
Pages (from-to)	10-15
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	183
Issue number	1-2
DOIs	https://doi.org/10.1016/S0168-583X(01)00636-X
State	Published - Jul 2001

Bibliographical note

Funding Information:
This work was supported in part by the National Research Laboratory Project on Surface and Interface Analysis, South Korea.

Keywords

Delta-doped multilayer
Electronic straggling
Medium energy ion scattering

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10.1016/S0168-583X(01)00636-X

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title = "Estimation of the electronic straggling using delta-doped multilayers",

abstract = "It is proposed that the electronic straggling of projectile ion beams for medium energy ion scattering spectroscopy (MEIS) can be estimated with delta-doped multilayers. From the depth dependence of the full width half maximum (FWHM) of the Ta peak of a Ta delta-doped Si multilayer, the electronic straggling of 100 keV H+ in Si could be estimated. The electronic straggling can be estimated without information on the exact thickness and the interface abruptness of the Ta delta-doped multilayers. The reduced electronic straggling, Ωe/ΩB was estimated to be 0.59. With the experimentally determined electronic straggling, the thickness of the Ta delta layer could be estimated and compared with the nominal thickness based on the growth rate determined by transmission electron microscopy (TEM).",

keywords = "Delta-doped multilayer, Electronic straggling, Medium energy ion scattering",

author = "Moon, {D. W.} and Lee, {H. I.} and Kim, {K. J.} and T. Nishimura and Y. Kido",

note = "Funding Information: This work was supported in part by the National Research Laboratory Project on Surface and Interface Analysis, South Korea.",

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doi = "10.1016/S0168-583X(01)00636-X",

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T1 - Estimation of the electronic straggling using delta-doped multilayers

AU - Moon, D. W.

AU - Lee, H. I.

AU - Kim, K. J.

AU - Nishimura, T.

AU - Kido, Y.

N1 - Funding Information: This work was supported in part by the National Research Laboratory Project on Surface and Interface Analysis, South Korea.

PY - 2001/7

Y1 - 2001/7

N2 - It is proposed that the electronic straggling of projectile ion beams for medium energy ion scattering spectroscopy (MEIS) can be estimated with delta-doped multilayers. From the depth dependence of the full width half maximum (FWHM) of the Ta peak of a Ta delta-doped Si multilayer, the electronic straggling of 100 keV H+ in Si could be estimated. The electronic straggling can be estimated without information on the exact thickness and the interface abruptness of the Ta delta-doped multilayers. The reduced electronic straggling, Ωe/ΩB was estimated to be 0.59. With the experimentally determined electronic straggling, the thickness of the Ta delta layer could be estimated and compared with the nominal thickness based on the growth rate determined by transmission electron microscopy (TEM).

AB - It is proposed that the electronic straggling of projectile ion beams for medium energy ion scattering spectroscopy (MEIS) can be estimated with delta-doped multilayers. From the depth dependence of the full width half maximum (FWHM) of the Ta peak of a Ta delta-doped Si multilayer, the electronic straggling of 100 keV H+ in Si could be estimated. The electronic straggling can be estimated without information on the exact thickness and the interface abruptness of the Ta delta-doped multilayers. The reduced electronic straggling, Ωe/ΩB was estimated to be 0.59. With the experimentally determined electronic straggling, the thickness of the Ta delta layer could be estimated and compared with the nominal thickness based on the growth rate determined by transmission electron microscopy (TEM).

KW - Delta-doped multilayer

KW - Electronic straggling

KW - Medium energy ion scattering

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U2 - 10.1016/S0168-583X(01)00636-X

DO - 10.1016/S0168-583X(01)00636-X

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

ER -

Estimation of the electronic straggling using delta-doped multilayers

Abstract

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Keywords

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