Er3+ photoluminescence properties of erbium-doped Si/SiO2 superlattices with subnanometer thin Si layers

Yong Ho Ha; Sehun Kim; Dae Won Moon; Ji Hong Jhe; Jung H. Shin

doi:10.1063/1.1383802

Er³⁺ photoluminescence properties of erbium-doped Si/SiO₂ superlattices with subnanometer thin Si layers

Yong Ho Ha, Sehun Kim, Dae Won Moon, Ji Hong Jhe, Jung H. Shin

Department of New Biology

Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Er-doped Si/SiO₂ superlattices were fabricated with subnanometer control of the Si layer thickness. A significant increase in the luminescence intensity was observed as the thickness of the Si layer was decreased from 3.6 nm to a single monolayer. The study of the photoluminescence properties of Er in relation to time and temperature revealed reduction of the bulk-Si region as the main reason for the increase in luminescence.

Original language	English
Pages (from-to)	287-289
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	3
DOIs	https://doi.org/10.1063/1.1383802
State	Published - 16 Jul 2001

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title = "Er3+ photoluminescence properties of erbium-doped Si/SiO2 superlattices with subnanometer thin Si layers",

abstract = "Er-doped Si/SiO2 superlattices were fabricated with subnanometer control of the Si layer thickness. A significant increase in the luminescence intensity was observed as the thickness of the Si layer was decreased from 3.6 nm to a single monolayer. The study of the photoluminescence properties of Er in relation to time and temperature revealed reduction of the bulk-Si region as the main reason for the increase in luminescence.",

author = "Ha, \{Yong Ho\} and Sehun Kim and Moon, \{Dae Won\} and Jhe, \{Ji Hong\} and Shin, \{Jung H.\}",

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AU - Ha, Yong Ho

AU - Kim, Sehun

AU - Moon, Dae Won

AU - Jhe, Ji Hong

AU - Shin, Jung H.

PY - 2001/7/16

Y1 - 2001/7/16

N2 - Er-doped Si/SiO2 superlattices were fabricated with subnanometer control of the Si layer thickness. A significant increase in the luminescence intensity was observed as the thickness of the Si layer was decreased from 3.6 nm to a single monolayer. The study of the photoluminescence properties of Er in relation to time and temperature revealed reduction of the bulk-Si region as the main reason for the increase in luminescence.

AB - Er-doped Si/SiO2 superlattices were fabricated with subnanometer control of the Si layer thickness. A significant increase in the luminescence intensity was observed as the thickness of the Si layer was decreased from 3.6 nm to a single monolayer. The study of the photoluminescence properties of Er in relation to time and temperature revealed reduction of the bulk-Si region as the main reason for the increase in luminescence.

UR - https://www.scopus.com/pages/publications/0035898349

U2 - 10.1063/1.1383802

DO - 10.1063/1.1383802

M3 - Article

AN - SCOPUS:0035898349

SN - 0003-6951

VL - 79

SP - 287

EP - 289

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Er³⁺ photoluminescence properties of erbium-doped Si/SiO₂ superlattices with subnanometer thin Si layers

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