Erratum: Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997)

Jaewon Jang; Rungrot Kitsomboonloha; Sarah L. Swisher; Eung Seok Park; Hongki Kang; Vivek Subramanian

doi:10.1002/adma.201402185

Erratum: Transparent high-performance thin film transistors from solution-processed SnO₂/ZrO₂ gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997)

Jaewon Jang
, Rungrot Kitsomboonloha
, Sarah L. Swisher
, Eung Seok Park
, Hongki Kang
, Vivek Subramanian

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Comment/debate

5 Scopus citations

Original language	English
Pages (from-to)	4412
Number of pages	1
Journal	Advanced Materials
Volume	26
Issue number	26
DOIs	https://doi.org/10.1002/adma.201402185
State	Published - 9 Jul 2014

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10.1002/adma.201402185

Cite this

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title = "Erratum: Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997)",

author = "Jaewon Jang and Rungrot Kitsomboonloha and Swisher, \{Sarah L.\} and Park, \{Eung Seok\} and Hongki Kang and Vivek Subramanian",

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Erratum: Transparent high-performance thin film transistors from solution-processed SnO₂/ZrO₂ gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997). / Jang, Jaewon; Kitsomboonloha, Rungrot; Swisher, Sarah L. et al.
In: Advanced Materials, Vol. 26, No. 26, 09.07.2014, p. 4412.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997)

AU - Jang, Jaewon

AU - Kitsomboonloha, Rungrot

AU - Swisher, Sarah L.

AU - Park, Eung Seok

AU - Kang, Hongki

AU - Subramanian, Vivek

PY - 2014/7/9

Y1 - 2014/7/9

UR - https://www.scopus.com/pages/publications/84904107550

U2 - 10.1002/adma.201402185

DO - 10.1002/adma.201402185

M3 - Comment/debate

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SN - 0935-9648

VL - 26

SP - 4412

JO - Advanced Materials

JF - Advanced Materials

IS - 26

ER -

Erratum: Transparent high-performance thin film transistors from solution-processed SnO2/ZrO2 gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997)

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Erratum: Transparent high-performance thin film transistors from solution-processed SnO₂/ZrO₂ gel-like precursors (Advanced Materials (2013) 25 (1042-1047) DOI: 10.1002/adma.201202997)