Enhanced thermal stability of high-dielectric Gd2O3 films using ZrO2 incorporation

M. H. Cho; D. W. Moon; S. A. Park; Y. S. Rho; Y. K. Kim; K. Jeong; C. H. Chang; J. H. Gu; J. H. Lee; S. Y. Choi

doi:10.1063/1.1644047

Enhanced thermal stability of high-dielectric Gd₂O₃ films using ZrO₂ incorporation

M. H. Cho, D. W. Moon, S. A. Park, Y. S. Rho, Y. K. Kim, K. Jeong, C. H. Chang, J. H. Gu, J. H. Lee, S. Y. Choi

Department of New Biology

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The thermal stability of Gd₂O₃ films as a function of incorporated ZrO₂ was investigated. The structural characteristics of epitaxial Gd₂O₃ with the codeposition of Zn were maintained on the Si(111) substrate. The improved cyrstallinity of the film and suppressed interfacial reactions were observed by the incorporation of ZrO₂ in Gd₂O₃. Depending on the microstructural changes, the structutral stability in the epitaxial structure with no deformation was enhanced upto 800°C. The extensive interactions between Gd and Si which caused interfacial defects were also minimized.

Original language	English
Pages (from-to)	678-680
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	5
DOIs	https://doi.org/10.1063/1.1644047
State	Published - 2 Feb 2004

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title = "Enhanced thermal stability of high-dielectric Gd2O3 films using ZrO2 incorporation",

abstract = "The thermal stability of Gd2O3 films as a function of incorporated ZrO2 was investigated. The structural characteristics of epitaxial Gd2O3 with the codeposition of Zn were maintained on the Si(111) substrate. The improved cyrstallinity of the film and suppressed interfacial reactions were observed by the incorporation of ZrO2 in Gd2O3. Depending on the microstructural changes, the structutral stability in the epitaxial structure with no deformation was enhanced upto 800°C. The extensive interactions between Gd and Si which caused interfacial defects were also minimized.",

author = "Cho, {M. H.} and Moon, {D. W.} and Park, {S. A.} and Rho, {Y. S.} and Kim, {Y. K.} and K. Jeong and Chang, {C. H.} and Gu, {J. H.} and Lee, {J. H.} and Choi, {S. Y.}",

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T1 - Enhanced thermal stability of high-dielectric Gd2O3 films using ZrO2 incorporation

AU - Cho, M. H.

AU - Moon, D. W.

AU - Park, S. A.

AU - Rho, Y. S.

AU - Kim, Y. K.

AU - Jeong, K.

AU - Chang, C. H.

AU - Gu, J. H.

AU - Lee, J. H.

AU - Choi, S. Y.

PY - 2004/2/2

Y1 - 2004/2/2

N2 - The thermal stability of Gd2O3 films as a function of incorporated ZrO2 was investigated. The structural characteristics of epitaxial Gd2O3 with the codeposition of Zn were maintained on the Si(111) substrate. The improved cyrstallinity of the film and suppressed interfacial reactions were observed by the incorporation of ZrO2 in Gd2O3. Depending on the microstructural changes, the structutral stability in the epitaxial structure with no deformation was enhanced upto 800°C. The extensive interactions between Gd and Si which caused interfacial defects were also minimized.

AB - The thermal stability of Gd2O3 films as a function of incorporated ZrO2 was investigated. The structural characteristics of epitaxial Gd2O3 with the codeposition of Zn were maintained on the Si(111) substrate. The improved cyrstallinity of the film and suppressed interfacial reactions were observed by the incorporation of ZrO2 in Gd2O3. Depending on the microstructural changes, the structutral stability in the epitaxial structure with no deformation was enhanced upto 800°C. The extensive interactions between Gd and Si which caused interfacial defects were also minimized.

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VL - 84

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EP - 680

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

ER -

Enhanced thermal stability of high-dielectric Gd₂O₃ films using ZrO₂ incorporation

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