Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding

Sung Won Lee; Minkwan Shin; Jaeyoon Park; Unyong Jeong

doi:10.1007/s13233-013-1119-1

Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding

Sung Won Lee, Minkwan Shin, Jaeyoon Park, Unyong Jeong

Department of Physics and Chemistry

Yonsei University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We investigated the stretchability of poly(3-hexylthiophene) (P3HT) thin film and its network structure. We found that stretchability of P3HT thin film is less than 3% strain and can be barely improved by the network structure. But, the ion-gel layer on the P3HT film could improve the electrical stability up to 6%. Based on the results, we fabricated high-performance polymer transistors (1 cm²/Vs and 10E4 on-off ratio) which are reasonably working at 10% tensile strain.

Original language	English
Pages (from-to)	311-314
Number of pages	4
Journal	Macromolecular Research
Volume	21
Issue number	3
DOIs	https://doi.org/10.1007/s13233-013-1119-1
State	Published - Mar 2013

Keywords

poly(3-hexylthiophene)
polymer semiconductor
stretchable active layer
stretchable device

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10.1007/s13233-013-1119-1

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title = "Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding",

abstract = "We investigated the stretchability of poly(3-hexylthiophene) (P3HT) thin film and its network structure. We found that stretchability of P3HT thin film is less than 3\% strain and can be barely improved by the network structure. But, the ion-gel layer on the P3HT film could improve the electrical stability up to 6\%. Based on the results, we fabricated high-performance polymer transistors (1 cm2/Vs and 10E4 on-off ratio) which are reasonably working at 10\% tensile strain.",

keywords = "poly(3-hexylthiophene), polymer semiconductor, stretchable active layer, stretchable device",

author = "Lee, \{Sung Won\} and Minkwan Shin and Jaeyoon Park and Unyong Jeong",

year = "2013",

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doi = "10.1007/s13233-013-1119-1",

language = "English",

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journal = "Macromolecular Research",

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T1 - Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding

AU - Lee, Sung Won

AU - Shin, Minkwan

AU - Park, Jaeyoon

AU - Jeong, Unyong

PY - 2013/3

Y1 - 2013/3

N2 - We investigated the stretchability of poly(3-hexylthiophene) (P3HT) thin film and its network structure. We found that stretchability of P3HT thin film is less than 3% strain and can be barely improved by the network structure. But, the ion-gel layer on the P3HT film could improve the electrical stability up to 6%. Based on the results, we fabricated high-performance polymer transistors (1 cm2/Vs and 10E4 on-off ratio) which are reasonably working at 10% tensile strain.

AB - We investigated the stretchability of poly(3-hexylthiophene) (P3HT) thin film and its network structure. We found that stretchability of P3HT thin film is less than 3% strain and can be barely improved by the network structure. But, the ion-gel layer on the P3HT film could improve the electrical stability up to 6%. Based on the results, we fabricated high-performance polymer transistors (1 cm2/Vs and 10E4 on-off ratio) which are reasonably working at 10% tensile strain.

KW - poly(3-hexylthiophene)

KW - polymer semiconductor

KW - stretchable active layer

KW - stretchable device

UR - https://www.scopus.com/pages/publications/84877801584

U2 - 10.1007/s13233-013-1119-1

DO - 10.1007/s13233-013-1119-1

M3 - Article

AN - SCOPUS:84877801584

SN - 1598-5032

VL - 21

SP - 311

EP - 314

JO - Macromolecular Research

JF - Macromolecular Research

IS - 3

ER -

Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding

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Keywords

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