Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding

Sung Won Lee, Minkwan Shin, Jaeyoon Park, Unyong Jeong

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We investigated the stretchability of poly(3-hexylthiophene) (P3HT) thin film and its network structure. We found that stretchability of P3HT thin film is less than 3% strain and can be barely improved by the network structure. But, the ion-gel layer on the P3HT film could improve the electrical stability up to 6%. Based on the results, we fabricated high-performance polymer transistors (1 cm2/Vs and 10E4 on-off ratio) which are reasonably working at 10% tensile strain.

Original languageEnglish
Pages (from-to)311-314
Number of pages4
JournalMacromolecular Research
Volume21
Issue number3
DOIs
StatePublished - Mar 2013

Keywords

  • poly(3-hexylthiophene)
  • polymer semiconductor
  • stretchable active layer
  • stretchable device

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