Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate

Baek Hyun Kim; Robert F. Davis; Chang Hee Cho; Seong Ju Park

doi:10.1063/1.3211113

Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate

Baek Hyun Kim, Robert F. Davis, Chang Hee Cho, Seong Ju Park

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We report the effect of a nanoroughened Si substrate on silicon quantum dot (Si QD) light-emitting diodes (LEDs). The electroluminescence of Si QD LEDs grown on the nanoroughened Si substrate was remarkably improved by 493% at an injection current of 90 mA compared to those of Si QD LEDs grown on the flat Si substrate. The electrical and optical enhancements were attributed to the enhanced inhomogeneous local electric field on the nanoroughened Si surface and the angular randomization of photons emitted from Si QDs at the nanoroughened surface of silicon nitride layer containing Si QDs.

Original language	English
Article number	073113
Journal	Applied Physics Letters
Volume	95
Issue number	7
DOIs	https://doi.org/10.1063/1.3211113
State	Published - 2009

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (Grant No. KRF-2008-357-D00159).

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title = "Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate",

abstract = "We report the effect of a nanoroughened Si substrate on silicon quantum dot (Si QD) light-emitting diodes (LEDs). The electroluminescence of Si QD LEDs grown on the nanoroughened Si substrate was remarkably improved by 493% at an injection current of 90 mA compared to those of Si QD LEDs grown on the flat Si substrate. The electrical and optical enhancements were attributed to the enhanced inhomogeneous local electric field on the nanoroughened Si surface and the angular randomization of photons emitted from Si QDs at the nanoroughened surface of silicon nitride layer containing Si QDs.",

author = "Kim, {Baek Hyun} and Davis, {Robert F.} and Cho, {Chang Hee} and Park, {Seong Ju}",

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AU - Kim, Baek Hyun

AU - Davis, Robert F.

AU - Cho, Chang Hee

AU - Park, Seong Ju

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (Grant No. KRF-2008-357-D00159).

PY - 2009

Y1 - 2009

N2 - We report the effect of a nanoroughened Si substrate on silicon quantum dot (Si QD) light-emitting diodes (LEDs). The electroluminescence of Si QD LEDs grown on the nanoroughened Si substrate was remarkably improved by 493% at an injection current of 90 mA compared to those of Si QD LEDs grown on the flat Si substrate. The electrical and optical enhancements were attributed to the enhanced inhomogeneous local electric field on the nanoroughened Si surface and the angular randomization of photons emitted from Si QDs at the nanoroughened surface of silicon nitride layer containing Si QDs.

AB - We report the effect of a nanoroughened Si substrate on silicon quantum dot (Si QD) light-emitting diodes (LEDs). The electroluminescence of Si QD LEDs grown on the nanoroughened Si substrate was remarkably improved by 493% at an injection current of 90 mA compared to those of Si QD LEDs grown on the flat Si substrate. The electrical and optical enhancements were attributed to the enhanced inhomogeneous local electric field on the nanoroughened Si surface and the angular randomization of photons emitted from Si QDs at the nanoroughened surface of silicon nitride layer containing Si QDs.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 073113

ER -

Enhanced performance of silicon quantum dot light-emitting diodes grown on nanoroughened silicon substrate

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