Enabling efficient system design using vertical nanowire transistor current mode logic

Vertical Nanowire-FET (VNFET) is a promising candidate to succeed in industry mainstream due to its superior suppression of short-channel-effects and area efficiency. However, to design logic gates, CMOS is not an appropriate solution due to the process incompatibility with VNFET, which creates a technical challenge for mass production. In this work, we propose a novel VNFET-based logic design, called VnanoCML (Vertical Nanowire Transistor-based Current Mode Logic), which addresses the process issue while significantly improving power and performance of diverse logic designs. Unlike the CMOS-based logic, our design exploits current mode logic to overcome the fabrication issue. Furthermore, we reduce drain-to-source resistance of VnanoCML, which results in higher performance improvement without compromising the subthreshold swing. In order to show the impact of the proposed VnanoCML, we present key logic designs which are SRAM, full adder and multiplier, and also evaluate the application-level effectiveness of digital designs for image processing and mathematical computation. Our proposed design improves the fundamental circuit characteristics including output swing, delay time and power consumption compared to conventional planar MOSFET (PFET)-based circuits. Consequentially our architecture-level results show that VnanoCML can enhance the performance and power by 16.4× and 1.15×, respectively. Furthermore, we show that VnanoCML improves the energy-delay product by 38.5× on average compared to PFET-based designs.