Electronic structure and stability of ferromagnetic GaN doped with Mn

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Abstract

Based on the first-principles spin-density functional calculations, we investigate the magnetic interactions between Mn ions in Mn-doped GaN. We find that the ferromagnetic coupling has a short-range nature, effective for Mn-Mn distances up to about 7 Å. For Mn concentrations of about 6%, the ferromagnetic solution is more stable than the antiferromagnetic state, while the ferromagnetic stability is weakened by electron doping. Using the calculated exchange coupling and the percolation approach, we estimate the Curie temperature lying above room temperature. Analyzing the Mn d levels, we suggest that the d-d hybridization between Mn ions is the main reason for stabilizing the ferromagnetic state.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages315-316
Number of pages2
DOIs
StatePublished - 30 Jun 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/TerritoryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

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