Electron tunneling through single self-assembled InAs quantum dots coupled to nanogap electrodes

K. Shibata, M. Jung, C. Buizert, A. Oiwa, K. Hirakawa, T. Machida, S. Tarucha

Research output: Contribution to journalConference articlepeer-review

Abstract

We have investigated electronic properties of self-assembled InAs quantum dots (QDs) grown on GaAs surfaces by using metallic Au and Al leads with narrow gaps. The fabricated junctions with Au nanogap electrodes show single electron tunneling behaviors. When coupling between electrons in the QDs and the electrodes is strong, Kondo effect with relatively high Kondo temperature T K of 10-15 K is observed. The samples with superconducting (SC) Al electrodes also exhibit clear Coulomb blockade effects. Furthermore, clear suppression in conductance is observed around VSD = 0 V for a voltage range of 4Δ/e at T = 40 mK, where Δ is the SC energy gap of Al, demonstrating successful fabrication of the SC-QD-SC junction in the self-assembled InAs QD system.

Original languageEnglish
Pages (from-to)2869-2872
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number9
DOIs
StatePublished - 2008
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 15 Oct 200718 Oct 2007

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