Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films

C. B. Lee; B. S. Kang; M. J. Lee; S. E. Ahn; G. Stefanovich; W. X. Xianyu; K. H. Kim; J. H. Hur; H. X. Yin; Y. Park; I. K. Yoo; J. B. Park; B. H. Park

doi:10.1063/1.2769759

Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films

C. B. Lee, B. S. Kang, M. J. Lee, S. E. Ahn, G. Stefanovich, W. X. Xianyu, K. H. Kim, J. H. Hur, H. X. Yin, Y. Park, I. K. Yoo, J. B. Park, B. H. Park

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

The effects of Ni and Ni0.83 Pt0.17 alloy electrodes on the resistance switching of the dc-sputtered polycrystalline NiO thin films were investigated. The initial off-state resistances of the films were similar to that of PtNiOPt film. However, after the first cycle of switching, the off-state resistance significantly decreased in the films with Ni in the electrode. It can be attributed to the migration of Ni from electrodes to the NiO films. The improvement in data dispersion of switching parameters is explained in terms of the decrease of the effective thickness of the films resulting from the migration of Ni.

Original language	English
Article number	082104
Journal	Applied Physics Letters
Volume	91
Issue number	8
DOIs	https://doi.org/10.1063/1.2769759
State	Published - 2007

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title = "Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films",

abstract = "The effects of Ni and Ni0.83 Pt0.17 alloy electrodes on the resistance switching of the dc-sputtered polycrystalline NiO thin films were investigated. The initial off-state resistances of the films were similar to that of PtNiOPt film. However, after the first cycle of switching, the off-state resistance significantly decreased in the films with Ni in the electrode. It can be attributed to the migration of Ni from electrodes to the NiO films. The improvement in data dispersion of switching parameters is explained in terms of the decrease of the effective thickness of the films resulting from the migration of Ni.",

author = "Lee, {C. B.} and Kang, {B. S.} and Lee, {M. J.} and Ahn, {S. E.} and G. Stefanovich and Xianyu, {W. X.} and Kim, {K. H.} and Hur, {J. H.} and Yin, {H. X.} and Y. Park and Yoo, {I. K.} and Park, {J. B.} and Park, {B. H.}",

year = "2007",

doi = "10.1063/1.2769759",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films

AU - Lee, C. B.

AU - Kang, B. S.

AU - Lee, M. J.

AU - Ahn, S. E.

AU - Stefanovich, G.

AU - Xianyu, W. X.

AU - Kim, K. H.

AU - Hur, J. H.

AU - Yin, H. X.

AU - Park, Y.

AU - Yoo, I. K.

AU - Park, J. B.

AU - Park, B. H.

PY - 2007

Y1 - 2007

N2 - The effects of Ni and Ni0.83 Pt0.17 alloy electrodes on the resistance switching of the dc-sputtered polycrystalline NiO thin films were investigated. The initial off-state resistances of the films were similar to that of PtNiOPt film. However, after the first cycle of switching, the off-state resistance significantly decreased in the films with Ni in the electrode. It can be attributed to the migration of Ni from electrodes to the NiO films. The improvement in data dispersion of switching parameters is explained in terms of the decrease of the effective thickness of the films resulting from the migration of Ni.

AB - The effects of Ni and Ni0.83 Pt0.17 alloy electrodes on the resistance switching of the dc-sputtered polycrystalline NiO thin films were investigated. The initial off-state resistances of the films were similar to that of PtNiOPt film. However, after the first cycle of switching, the off-state resistance significantly decreased in the films with Ni in the electrode. It can be attributed to the migration of Ni from electrodes to the NiO films. The improvement in data dispersion of switching parameters is explained in terms of the decrease of the effective thickness of the films resulting from the migration of Ni.

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U2 - 10.1063/1.2769759

DO - 10.1063/1.2769759

M3 - Article

AN - SCOPUS:34548263330

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082104

ER -

Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films

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