Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model

C. Y. Yim; D. Y. Jeon; K. H. Kim; G. T. Kim; Y. S. Woo; S. Roth; J. S. Lee; S. Kim

Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model

C. Y. Yim, D. Y. Jeon, K. H. Kim, G. T. Kim, Y. S. Woo, S. Roth, J. S. Lee, S. Kim

Department of Energy and Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

A single ZnO nanowire field-effect transistor(FET) was fabricated and its current-voltage characteristics were recorded at the temperatures ranging from T = 107 K to 300 K. Current-voltage characteristics showed typical non-ohmic behaviors with noticeable temperature dependence of the carrier concentration and the mobilities, reflecting the influence of the contact barriers formed between the ZnO nanowire and metal electrodes. In this paper, an equivalent circuit model of the ZnO nanowire FET and its analysis methods with PSPICE simulation are suggested in order to model the contact barriers in nanowire devices.

Original language	English
Pages (from-to)	1565-1569
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	48
Issue number	6
State	Published - Jun 2006

Keywords

Contact resistance
Field effect transistor
PSPICE simulation
ZnO nanowire

Cite this

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title = "Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model",

abstract = "A single ZnO nanowire field-effect transistor(FET) was fabricated and its current-voltage characteristics were recorded at the temperatures ranging from T = 107 K to 300 K. Current-voltage characteristics showed typical non-ohmic behaviors with noticeable temperature dependence of the carrier concentration and the mobilities, reflecting the influence of the contact barriers formed between the ZnO nanowire and metal electrodes. In this paper, an equivalent circuit model of the ZnO nanowire FET and its analysis methods with PSPICE simulation are suggested in order to model the contact barriers in nanowire devices.",

keywords = "Contact resistance, Field effect transistor, PSPICE simulation, ZnO nanowire",

author = "Yim, {C. Y.} and Jeon, {D. Y.} and Kim, {K. H.} and Kim, {G. T.} and Woo, {Y. S.} and S. Roth and Lee, {J. S.} and S. Kim",

year = "2006",

month = jun,

language = "English",

volume = "48",

pages = "1565--1569",

journal = "Journal of the Korean Physical Society",

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publisher = "Korean Physical Society",

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TY - JOUR

T1 - Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model

AU - Yim, C. Y.

AU - Jeon, D. Y.

AU - Kim, K. H.

AU - Kim, G. T.

AU - Woo, Y. S.

AU - Roth, S.

AU - Lee, J. S.

AU - Kim, S.

PY - 2006/6

Y1 - 2006/6

N2 - A single ZnO nanowire field-effect transistor(FET) was fabricated and its current-voltage characteristics were recorded at the temperatures ranging from T = 107 K to 300 K. Current-voltage characteristics showed typical non-ohmic behaviors with noticeable temperature dependence of the carrier concentration and the mobilities, reflecting the influence of the contact barriers formed between the ZnO nanowire and metal electrodes. In this paper, an equivalent circuit model of the ZnO nanowire FET and its analysis methods with PSPICE simulation are suggested in order to model the contact barriers in nanowire devices.

AB - A single ZnO nanowire field-effect transistor(FET) was fabricated and its current-voltage characteristics were recorded at the temperatures ranging from T = 107 K to 300 K. Current-voltage characteristics showed typical non-ohmic behaviors with noticeable temperature dependence of the carrier concentration and the mobilities, reflecting the influence of the contact barriers formed between the ZnO nanowire and metal electrodes. In this paper, an equivalent circuit model of the ZnO nanowire FET and its analysis methods with PSPICE simulation are suggested in order to model the contact barriers in nanowire devices.

KW - Contact resistance

KW - Field effect transistor

KW - PSPICE simulation

KW - ZnO nanowire

UR - http://www.scopus.com/inward/record.url?scp=33746046738&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33746046738

SN - 0374-4884

VL - 48

SP - 1565

EP - 1569

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6

ER -

Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model

Abstract

Keywords

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