Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes

Jaewook Jeong; Gwang Jun Lee; Joonwoo Kim; Byeongdae Choi

doi:10.1063/1.3694273

Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes

Jaewook Jeong, Gwang Jun Lee, Joonwoo Kim, Byeongdae Choi

Division of Electronics & Information System

Daegu Gyeongbuk Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

We analyzed the effects of Cu source/drain (S/D) electrodes on the performance of a-InGaZnO (a-IGZO) thin-film transistors (TFTs). Owing to the Cu migration, the parasitic resistance was as low as 10 cm with small current transfer length. Based on the transfer characteristics, we found that V _DS dependent Cu migration creates donor-like deep and tail states in the sub-bandgap region. The feasibility of Cu S/D electrodes for a-IGZO TFTs using inverter circuits indicates that fabrication of high performance circuits is possible by controlling the Cu electro-migration.

Original language	English
Article number	112109
Journal	Applied Physics Letters
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.3694273
State	Published - 12 Mar 2012

Bibliographical note

Funding Information:
This work was supported by the basic research program (12-NB-02) of the Daegu Gyeongbuk Institute of Science and Technology (DGIST) in Korea.

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title = "Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes",

abstract = "We analyzed the effects of Cu source/drain (S/D) electrodes on the performance of a-InGaZnO (a-IGZO) thin-film transistors (TFTs). Owing to the Cu migration, the parasitic resistance was as low as 10 cm with small current transfer length. Based on the transfer characteristics, we found that V DS dependent Cu migration creates donor-like deep and tail states in the sub-bandgap region. The feasibility of Cu S/D electrodes for a-IGZO TFTs using inverter circuits indicates that fabrication of high performance circuits is possible by controlling the Cu electro-migration.",

author = "Jaewook Jeong and {Jun Lee}, Gwang and Joonwoo Kim and Byeongdae Choi",

note = "Funding Information: This work was supported by the basic research program (12-NB-02) of the Daegu Gyeongbuk Institute of Science and Technology (DGIST) in Korea.",

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AU - Jeong, Jaewook

AU - Jun Lee, Gwang

AU - Kim, Joonwoo

AU - Choi, Byeongdae

N1 - Funding Information: This work was supported by the basic research program (12-NB-02) of the Daegu Gyeongbuk Institute of Science and Technology (DGIST) in Korea.

PY - 2012/3/12

Y1 - 2012/3/12

N2 - We analyzed the effects of Cu source/drain (S/D) electrodes on the performance of a-InGaZnO (a-IGZO) thin-film transistors (TFTs). Owing to the Cu migration, the parasitic resistance was as low as 10 cm with small current transfer length. Based on the transfer characteristics, we found that V DS dependent Cu migration creates donor-like deep and tail states in the sub-bandgap region. The feasibility of Cu S/D electrodes for a-IGZO TFTs using inverter circuits indicates that fabrication of high performance circuits is possible by controlling the Cu electro-migration.

AB - We analyzed the effects of Cu source/drain (S/D) electrodes on the performance of a-InGaZnO (a-IGZO) thin-film transistors (TFTs). Owing to the Cu migration, the parasitic resistance was as low as 10 cm with small current transfer length. Based on the transfer characteristics, we found that V DS dependent Cu migration creates donor-like deep and tail states in the sub-bandgap region. The feasibility of Cu S/D electrodes for a-IGZO TFTs using inverter circuits indicates that fabrication of high performance circuits is possible by controlling the Cu electro-migration.

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JO - Applied Physics Letters

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Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes

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