Electrical and Optical Properties of VO2 Polymorphic Films Grown Epitaxially on Y-Stabilized ZrO2

Songhee Choi; Sung Jin Chang; Junhyeob Oh; Jae Hyuck Jang; Shinbuhm Lee

doi:10.1002/aelm.201700620

Electrical and Optical Properties of VO₂ Polymorphic Films Grown Epitaxially on Y-Stabilized ZrO₂

Songhee Choi, Sung Jin Chang, Junhyeob Oh, Jae Hyuck Jang, Shinbuhm Lee

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Vanadium dioxide (VO₂) polymorphs have many interesting physical and chemical properties that are crystal-structure dependent. It is reported that polymorphic (010)VO₂(M1), (100)VO₂(A), and (100)VO₂(B) can be epitaxially grown on (001)-, (011)-, and (111)-oriented Y-stabilized ZrO₂ (YSZ), respectively. While VO₂(M1) shows a typical metal–insulator transition near 68 °C, and VO₂(B) exhibits insulating behavior, the resistivity of VO₂(A) is lower by three orders of magnitude than that of (100)VO₂(A) epitaxial films previously grown on (011)SrTiO₃. Ellipsometry reveals that the bandgap of VO₂(A) also decreases. Each VO₂ polymorphic film grown on cost-effective YSZ will be of great interest for numerous electronic and energy applications.

Original language	English
Article number	1700620
Journal	Advanced Electronic Materials
Volume	4
Issue number	6
DOIs	https://doi.org/10.1002/aelm.201700620
State	Published - Jun 2018

Bibliographical note

Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

VO polymorphs
Y-stabilized ZrO
electrical resistivity
epitaxial films
optical conductivity

Access to Document

10.1002/aelm.201700620

Cite this

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title = "Electrical and Optical Properties of VO2 Polymorphic Films Grown Epitaxially on Y-Stabilized ZrO2 ",

abstract = "Vanadium dioxide (VO2) polymorphs have many interesting physical and chemical properties that are crystal-structure dependent. It is reported that polymorphic (010)VO2(M1), (100)VO2(A), and (100)VO2(B) can be epitaxially grown on (001)-, (011)-, and (111)-oriented Y-stabilized ZrO2 (YSZ), respectively. While VO2(M1) shows a typical metal–insulator transition near 68 °C, and VO2(B) exhibits insulating behavior, the resistivity of VO2(A) is lower by three orders of magnitude than that of (100)VO2(A) epitaxial films previously grown on (011)SrTiO3. Ellipsometry reveals that the bandgap of VO2(A) also decreases. Each VO2 polymorphic film grown on cost-effective YSZ will be of great interest for numerous electronic and energy applications.",

keywords = "VO polymorphs, Y-stabilized ZrO, electrical resistivity, epitaxial films, optical conductivity",

author = "Songhee Choi and Chang, {Sung Jin} and Junhyeob Oh and Jang, {Jae Hyuck} and Shinbuhm Lee",

note = "Publisher Copyright: {\textcopyright} 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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T1 - Electrical and Optical Properties of VO2 Polymorphic Films Grown Epitaxially on Y-Stabilized ZrO2

AU - Choi, Songhee

AU - Chang, Sung Jin

AU - Oh, Junhyeob

AU - Jang, Jae Hyuck

AU - Lee, Shinbuhm

PY - 2018/6

Y1 - 2018/6

N2 - Vanadium dioxide (VO2) polymorphs have many interesting physical and chemical properties that are crystal-structure dependent. It is reported that polymorphic (010)VO2(M1), (100)VO2(A), and (100)VO2(B) can be epitaxially grown on (001)-, (011)-, and (111)-oriented Y-stabilized ZrO2 (YSZ), respectively. While VO2(M1) shows a typical metal–insulator transition near 68 °C, and VO2(B) exhibits insulating behavior, the resistivity of VO2(A) is lower by three orders of magnitude than that of (100)VO2(A) epitaxial films previously grown on (011)SrTiO3. Ellipsometry reveals that the bandgap of VO2(A) also decreases. Each VO2 polymorphic film grown on cost-effective YSZ will be of great interest for numerous electronic and energy applications.

AB - Vanadium dioxide (VO2) polymorphs have many interesting physical and chemical properties that are crystal-structure dependent. It is reported that polymorphic (010)VO2(M1), (100)VO2(A), and (100)VO2(B) can be epitaxially grown on (001)-, (011)-, and (111)-oriented Y-stabilized ZrO2 (YSZ), respectively. While VO2(M1) shows a typical metal–insulator transition near 68 °C, and VO2(B) exhibits insulating behavior, the resistivity of VO2(A) is lower by three orders of magnitude than that of (100)VO2(A) epitaxial films previously grown on (011)SrTiO3. Ellipsometry reveals that the bandgap of VO2(A) also decreases. Each VO2 polymorphic film grown on cost-effective YSZ will be of great interest for numerous electronic and energy applications.

KW - VO polymorphs

KW - Y-stabilized ZrO

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KW - epitaxial films

KW - optical conductivity

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