Electric-field control of tunneling magnetoresistance effect in a NiInAsNi quantum-dot spin valve

K. Hamaya; M. Kitabatake; K. Shibata; M. Jung; M. Kawamura; K. Hirakawa; T. MacHida; T. Taniyama; S. Ishida; Y. Arakawa

doi:10.1063/1.2759264

Electric-field control of tunneling magnetoresistance effect in a NiInAsNi quantum-dot spin valve

K. Hamaya
, M. Kitabatake
, K. Shibata
, M. Jung
, M. Kawamura
, K. Hirakawa
, T. MacHida
, T. Taniyama
, S. Ishida
, Y. Arakawa

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

78 Scopus citations

Abstract

The authors demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot spin-valve device. By using ferromagnetic Ni nanogap electrodes, they observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.

Original language	English
Article number	022107
Journal	Applied Physics Letters
Volume	91
Issue number	2
DOIs	https://doi.org/10.1063/1.2759264
State	Published - 2007

Bibliographical note

Funding Information:
Two of the authors (K.H. and T.M.) thank S. Tarucha and A. Oiwa for their fruitful discussions. This work was supported by the Special Coordination Funds for Promoting Science and Technology, and the special fund of Institute of Industrial Science, University of Tokyo, and Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology, and the Sumitomo Foundation.

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10.1063/1.2759264

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title = "Electric-field control of tunneling magnetoresistance effect in a NiInAsNi quantum-dot spin valve",

abstract = "The authors demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot spin-valve device. By using ferromagnetic Ni nanogap electrodes, they observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.",

author = "K. Hamaya and M. Kitabatake and K. Shibata and M. Jung and M. Kawamura and K. Hirakawa and T. MacHida and T. Taniyama and S. Ishida and Y. Arakawa",

note = "Funding Information: Two of the authors (K.H. and T.M.) thank S. Tarucha and A. Oiwa for their fruitful discussions. This work was supported by the Special Coordination Funds for Promoting Science and Technology, and the special fund of Institute of Industrial Science, University of Tokyo, and Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology, and the Sumitomo Foundation.",

year = "2007",

doi = "10.1063/1.2759264",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Electric-field control of tunneling magnetoresistance effect in a NiInAsNi quantum-dot spin valve

AU - Hamaya, K.

AU - Kitabatake, M.

AU - Shibata, K.

AU - Jung, M.

AU - Kawamura, M.

AU - Hirakawa, K.

AU - MacHida, T.

AU - Taniyama, T.

AU - Ishida, S.

AU - Arakawa, Y.

N1 - Funding Information: Two of the authors (K.H. and T.M.) thank S. Tarucha and A. Oiwa for their fruitful discussions. This work was supported by the Special Coordination Funds for Promoting Science and Technology, and the special fund of Institute of Industrial Science, University of Tokyo, and Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology, and the Sumitomo Foundation.

PY - 2007

Y1 - 2007

N2 - The authors demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot spin-valve device. By using ferromagnetic Ni nanogap electrodes, they observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.

AB - The authors demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot spin-valve device. By using ferromagnetic Ni nanogap electrodes, they observe the Coulomb blockade oscillations at a small bias voltage. In the vicinity of the Coulomb blockade peak, the TMR effect is significantly modulated and even its sign is switched by changing the gate voltage, where the sign of the TMR value changes at the resonant condition.

UR - https://www.scopus.com/pages/publications/34547217909

U2 - 10.1063/1.2759264

DO - 10.1063/1.2759264

M3 - Article

AN - SCOPUS:34547217909

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022107

ER -

Electric-field control of tunneling magnetoresistance effect in a NiInAsNi quantum-dot spin valve

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