Effects of Ti addition on sol-gel derived InO and InZnO thin film transistors

Jung Hye Kim; Dae Ho Son; Si Nea Park; Dae Hwan Kim; Shi Joon Sung; Eun Ae Jung; Kiryong Ha; Jin Kyu Kang

doi:10.1016/j.cap.2011.07.043

Effects of Ti addition on sol-gel derived InO and InZnO thin film transistors

Jung Hye Kim, Dae Ho Son, Si Nea Park, Dae Hwan Kim, Shi Joon Sung, Eun Ae Jung, Kiryong Ha, Jin Kyu Kang

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

In this study, we have newly developed titanium-indium oxide (TiInO) and titanium-indium zinc oxide (TiInZnO) thin films as the active channel layer in thin film transistors (TFTs) by the sol-gel process. The effects of adding Ti on TiInO and TiInZnO TFTs were investigated. The addition of Ti elements can suppress formation of oxygen vacancies because of the stronger oxidation tendency of Ti relative to that of Zn or In. TiInO and TiInZnO TFTs showed lower off currents and higher on/off current ratios than pure InO and InZnO TFTs. A TiInO TFT doped with 10.31 mol% Ti showed good performance with an on/off current ratio greater than 10 ⁷, and a field-effect mobility of 1.91 cm ² V ^-1 S ^-1. A TiInZnO TFT doped with 2.92 mol % Ti showed an on/off current ratio greater than 10 ⁶, and a field-effect mobility of 0.45 cm ² V ^-1 S ^-1.

Original language	English
Pages (from-to)	e24-e28
Journal	Current Applied Physics
Volume	12
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1016/j.cap.2011.07.043
State	Published - Sep 2012

Bibliographical note

Funding Information:
This work was supported by the DGIST R&D Programs of the Ministry of Education, Science and Technology of Korea (11-BD-01 and 11-BD-03). We thank Dr. Bae of the Korea Basic Science Institute in Busan center for obtaining the XPS spectra.

Keywords

Metal oxide
Sol-gel
Thin film transistor
TiInO
TiInZnO

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title = "Effects of Ti addition on sol-gel derived InO and InZnO thin film transistors",

abstract = "In this study, we have newly developed titanium-indium oxide (TiInO) and titanium-indium zinc oxide (TiInZnO) thin films as the active channel layer in thin film transistors (TFTs) by the sol-gel process. The effects of adding Ti on TiInO and TiInZnO TFTs were investigated. The addition of Ti elements can suppress formation of oxygen vacancies because of the stronger oxidation tendency of Ti relative to that of Zn or In. TiInO and TiInZnO TFTs showed lower off currents and higher on/off current ratios than pure InO and InZnO TFTs. A TiInO TFT doped with 10.31 mol% Ti showed good performance with an on/off current ratio greater than 10 7, and a field-effect mobility of 1.91 cm 2 V -1 S -1. A TiInZnO TFT doped with 2.92 mol % Ti showed an on/off current ratio greater than 10 6, and a field-effect mobility of 0.45 cm 2 V -1 S -1.",

keywords = "Metal oxide, Sol-gel, Thin film transistor, TiInO, TiInZnO",

author = "Kim, {Jung Hye} and Son, {Dae Ho} and Park, {Si Nea} and Kim, {Dae Hwan} and Sung, {Shi Joon} and Jung, {Eun Ae} and Kiryong Ha and Kang, {Jin Kyu}",

note = "Funding Information: This work was supported by the DGIST R&D Programs of the Ministry of Education, Science and Technology of Korea (11-BD-01 and 11-BD-03). We thank Dr. Bae of the Korea Basic Science Institute in Busan center for obtaining the XPS spectra.",

year = "2012",

month = sep,

doi = "10.1016/j.cap.2011.07.043",

language = "English",

volume = "12",

pages = "e24--e28",

journal = "Current Applied Physics",

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TY - JOUR

T1 - Effects of Ti addition on sol-gel derived InO and InZnO thin film transistors

AU - Kim, Jung Hye

AU - Son, Dae Ho

AU - Park, Si Nea

AU - Kim, Dae Hwan

AU - Sung, Shi Joon

AU - Jung, Eun Ae

AU - Ha, Kiryong

AU - Kang, Jin Kyu

N1 - Funding Information: This work was supported by the DGIST R&D Programs of the Ministry of Education, Science and Technology of Korea (11-BD-01 and 11-BD-03). We thank Dr. Bae of the Korea Basic Science Institute in Busan center for obtaining the XPS spectra.

PY - 2012/9

Y1 - 2012/9

N2 - In this study, we have newly developed titanium-indium oxide (TiInO) and titanium-indium zinc oxide (TiInZnO) thin films as the active channel layer in thin film transistors (TFTs) by the sol-gel process. The effects of adding Ti on TiInO and TiInZnO TFTs were investigated. The addition of Ti elements can suppress formation of oxygen vacancies because of the stronger oxidation tendency of Ti relative to that of Zn or In. TiInO and TiInZnO TFTs showed lower off currents and higher on/off current ratios than pure InO and InZnO TFTs. A TiInO TFT doped with 10.31 mol% Ti showed good performance with an on/off current ratio greater than 10 7, and a field-effect mobility of 1.91 cm 2 V -1 S -1. A TiInZnO TFT doped with 2.92 mol % Ti showed an on/off current ratio greater than 10 6, and a field-effect mobility of 0.45 cm 2 V -1 S -1.

AB - In this study, we have newly developed titanium-indium oxide (TiInO) and titanium-indium zinc oxide (TiInZnO) thin films as the active channel layer in thin film transistors (TFTs) by the sol-gel process. The effects of adding Ti on TiInO and TiInZnO TFTs were investigated. The addition of Ti elements can suppress formation of oxygen vacancies because of the stronger oxidation tendency of Ti relative to that of Zn or In. TiInO and TiInZnO TFTs showed lower off currents and higher on/off current ratios than pure InO and InZnO TFTs. A TiInO TFT doped with 10.31 mol% Ti showed good performance with an on/off current ratio greater than 10 7, and a field-effect mobility of 1.91 cm 2 V -1 S -1. A TiInZnO TFT doped with 2.92 mol % Ti showed an on/off current ratio greater than 10 6, and a field-effect mobility of 0.45 cm 2 V -1 S -1.

KW - Metal oxide

KW - Sol-gel

KW - Thin film transistor

KW - TiInO

KW - TiInZnO

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SP - e24-e28

JO - Current Applied Physics

JF - Current Applied Physics

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ER -

Effects of Ti addition on sol-gel derived InO and InZnO thin film transistors

Abstract

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Keywords

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