Abstract
In this study, we investigated the electrical and structural properties of sulfur-graded Cu2ZnSn(S,Se)4 (CZTSSe) thin films grown using a modified two-step process according to the annealing temperature. The sulfur content of the CZTSSe thin film was increased with annealing temperature and a Zn(S, Se) secondary phase was observed at temperatures higher than 500 °C. The Raman spectrum of the CZTSSe thin film shifted continuously toward the high frequency direction with increasing S content and the Cu2SnSe3 (CTSe) secondary phase was present below 440 °C. From the results of dimpling Raman spectroscopy and scanning transmission electron microscopy (STEM) line scanning, we confirmed that the S content increased gradually from the Mo back contact to the surface of the CZTSSe thin film. Finally, a sulfur-graded CZTSSe thin film with a photovoltaic efficiency of 7.03% was fabricated by optimizing the annealing temperature.
Original language | English |
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Pages (from-to) | 406-412 |
Number of pages | 7 |
Journal | Journal of Industrial and Engineering Chemistry |
Volume | 82 |
DOIs | |
State | Published - 25 Feb 2020 |
Bibliographical note
Publisher Copyright:© 2019 The Korean Society of Industrial and Engineering Chemistry
Keywords
- CZTSSe
- Co-evaporation
- HS gas
- Rapid thermal process
- Se)
- Sulfur-graded
- Zn(S