Effects of Ta addition through co-sputtering on the electrical characteristics of indium tin oxide thin film transistors

Si Nae Park; Dae Ho Son; Shi Joon Sung; Jin Kyu Kang; Dae Hwan Kim

doi:10.1166/jnn.2015.8341

Effects of Ta addition through co-sputtering on the electrical characteristics of indium tin oxide thin film transistors

Si Nae Park, Dae Ho Son, Shi Joon Sung, Jin Kyu Kang, Dae Hwan Kim

Division of Energy Techonology

Daegu Gyeongbuk Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have investigated the effects of adding (Ta) ions to InSnO thin films by co-sputtering on the performance of InSnO thin film transistors (TFTs). TaInSnO TFTs exhibited significantly lower off currents and higher on/off current ratios. Ta ions, owing to their strong affinity to oxygen suppress the formation of free electron carriers in thin films; and hence, play an important role in enhancing the electrical characteristics of the TFTs. The optimized TaInSnO TFTs showed high on/off ratios and low subthreshold swings.

Original language	English
Pages (from-to)	386-390
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	15
Issue number	1
DOIs	https://doi.org/10.1166/jnn.2015.8341
State	Published - 1 Jan 2015

Bibliographical note

Publisher Copyright:
Copyright © 2015 American Scientific Publishers All rights reserved.

Keywords

High-k material
Metal oxide thin film transistor
TaInSnO

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10.1166/jnn.2015.8341

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abstract = "We have investigated the effects of adding (Ta) ions to InSnO thin films by co-sputtering on the performance of InSnO thin film transistors (TFTs). TaInSnO TFTs exhibited significantly lower off currents and higher on/off current ratios. Ta ions, owing to their strong affinity to oxygen suppress the formation of free electron carriers in thin films; and hence, play an important role in enhancing the electrical characteristics of the TFTs. The optimized TaInSnO TFTs showed high on/off ratios and low subthreshold swings.",

keywords = "High-k material, Metal oxide thin film transistor, TaInSnO",

author = "Park, {Si Nae} and Son, {Dae Ho} and Sung, {Shi Joon} and Kang, {Jin Kyu} and Kim, {Dae Hwan}",

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AU - Park, Si Nae

AU - Son, Dae Ho

AU - Sung, Shi Joon

AU - Kang, Jin Kyu

AU - Kim, Dae Hwan

PY - 2015/1/1

Y1 - 2015/1/1

N2 - We have investigated the effects of adding (Ta) ions to InSnO thin films by co-sputtering on the performance of InSnO thin film transistors (TFTs). TaInSnO TFTs exhibited significantly lower off currents and higher on/off current ratios. Ta ions, owing to their strong affinity to oxygen suppress the formation of free electron carriers in thin films; and hence, play an important role in enhancing the electrical characteristics of the TFTs. The optimized TaInSnO TFTs showed high on/off ratios and low subthreshold swings.

AB - We have investigated the effects of adding (Ta) ions to InSnO thin films by co-sputtering on the performance of InSnO thin film transistors (TFTs). TaInSnO TFTs exhibited significantly lower off currents and higher on/off current ratios. Ta ions, owing to their strong affinity to oxygen suppress the formation of free electron carriers in thin films; and hence, play an important role in enhancing the electrical characteristics of the TFTs. The optimized TaInSnO TFTs showed high on/off ratios and low subthreshold swings.

KW - High-k material

KW - Metal oxide thin film transistor

KW - TaInSnO

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U2 - 10.1166/jnn.2015.8341

DO - 10.1166/jnn.2015.8341

M3 - Article

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SN - 1533-4880

VL - 15

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EP - 390

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 1

ER -

Effects of Ta addition through co-sputtering on the electrical characteristics of indium tin oxide thin film transistors

Abstract

Bibliographical note

Keywords

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