Effects of metal electrodes on the resistive memory switching property of NiO thin films

C. B. Lee; B. S. Kang; A. Benayad; M. J. Lee; S. E. Ahn; K. H. Kim; G. Stefanovich; Y. Park; I. K. Yoo

doi:10.1063/1.2967194

Effects of metal electrodes on the resistive memory switching property of NiO thin films

C. B. Lee, B. S. Kang, A. Benayad, M. J. Lee, S. E. Ahn, K. H. Kim, G. Stefanovich, Y. Park, I. K. Yoo

Division of Nanotechnology

Samsung

Research output: Contribution to journal › Article › peer-review

184 Scopus citations

Abstract

The effects of various metal electrodes on the resistive switching of NiO thin films were investigated. Contrary to the belief that Pt is used for its high work function, which enables Ohmic contact to p -type NiO, resistive switching was observed in films with Ta or Al electrodes with a low work function in the as-deposited state. The resistive switching of films with a Ag or Cu top electrode with a low work function and high free energy of oxidation shows the importance of the formation of an oxide layer at the metal/NiO interface.

Original language	English
Article number	042115
Journal	Applied Physics Letters
Volume	93
Issue number	4
DOIs	https://doi.org/10.1063/1.2967194
State	Published - 2008

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@article{aa970c491a774103bf63bc5030e4ceaf,

title = "Effects of metal electrodes on the resistive memory switching property of NiO thin films",

abstract = "The effects of various metal electrodes on the resistive switching of NiO thin films were investigated. Contrary to the belief that Pt is used for its high work function, which enables Ohmic contact to p -type NiO, resistive switching was observed in films with Ta or Al electrodes with a low work function in the as-deposited state. The resistive switching of films with a Ag or Cu top electrode with a low work function and high free energy of oxidation shows the importance of the formation of an oxide layer at the metal/NiO interface.",

author = "Lee, \{C. B.\} and Kang, \{B. S.\} and A. Benayad and Lee, \{M. J.\} and Ahn, \{S. E.\} and Kim, \{K. H.\} and G. Stefanovich and Y. Park and Yoo, \{I. K.\}",

year = "2008",

doi = "10.1063/1.2967194",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Effects of metal electrodes on the resistive memory switching property of NiO thin films

AU - Lee, C. B.

AU - Kang, B. S.

AU - Benayad, A.

AU - Lee, M. J.

AU - Ahn, S. E.

AU - Kim, K. H.

AU - Stefanovich, G.

AU - Park, Y.

AU - Yoo, I. K.

PY - 2008

Y1 - 2008

N2 - The effects of various metal electrodes on the resistive switching of NiO thin films were investigated. Contrary to the belief that Pt is used for its high work function, which enables Ohmic contact to p -type NiO, resistive switching was observed in films with Ta or Al electrodes with a low work function in the as-deposited state. The resistive switching of films with a Ag or Cu top electrode with a low work function and high free energy of oxidation shows the importance of the formation of an oxide layer at the metal/NiO interface.

AB - The effects of various metal electrodes on the resistive switching of NiO thin films were investigated. Contrary to the belief that Pt is used for its high work function, which enables Ohmic contact to p -type NiO, resistive switching was observed in films with Ta or Al electrodes with a low work function in the as-deposited state. The resistive switching of films with a Ag or Cu top electrode with a low work function and high free energy of oxidation shows the importance of the formation of an oxide layer at the metal/NiO interface.

UR - https://www.scopus.com/pages/publications/49149097171

U2 - 10.1063/1.2967194

DO - 10.1063/1.2967194

M3 - Article

AN - SCOPUS:49149097171

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042115

ER -

Effects of metal electrodes on the resistive memory switching property of NiO thin films

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