Effects of a load resistor on conducting filament characteristics and unipolar resistive switching behaviors in a Pt/NiO/Pt structure

Inrok Hwang; Myung Jae Lee; Jieun Bae; Sahwan Hong; Jin Soo Kim; Jinsik Choi; Xiao Long Deng; Seung Eon Ahn; Sung Oong Kang; Bae Ho Park

doi:10.1109/LED.2012.2190259

Effects of a load resistor on conducting filament characteristics and unipolar resistive switching behaviors in a Pt/NiO/Pt structure

Inrok Hwang, Myung Jae Lee, Jieun Bae, Sahwan Hong, Jin Soo Kim, Jinsik Choi, Xiao Long Deng, Seung Eon Ahn, Sung Oong Kang, Bae Ho Park

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

With a simply modified circuit design connecting a Pt/NiO/Pt capacitor to a serial load resistor (R _L), resistive switching (RS) characteristics are significantly improved. Distributions of current at low-resistance state and switching voltages during reset and set processes are much reduced, and RS endurance is much enhanced. Using percolation theory, we find that a multiply connected conducting filament (CF) is preferentially formed in a Pt/NiO/Pt capacitor serially connected to an $R _L of 1 kΩ. The multiply connected CF may provide uniform heat distribution to a Pt/NiO/Pt capacitor, resulting in reduced randomness during heat-assisted reset process and improved RS characteristics.

Original language	English
Article number	6186772
Pages (from-to)	881-883
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	6
DOIs	https://doi.org/10.1109/LED.2012.2190259
State	Published - 2012

Bibliographical note

Funding Information:
Manuscript received January 31, 2012; accepted March 1, 2012. Date of publication April 18, 2012; date of current version May 18, 2012. This work was supported in part by the Korean Government MEST under KOSEF NRL Program Grant 2008-0060004, by MEST under KOSEF WCU Program Grant R31-2008-000-10057-0, by Seoul R&BD Program Grant WR090671, and by the Korean MEST Quantum Metamaterials Research Center under KOSEF Grant R11-2008-053-03002-0. The review of this letter was arranged by Editor T. San.

Keywords

Conducting filament (CF)
load resistor
nonvolatile memory
resistive random-access memory (ReRAM)

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10.1109/LED.2012.2190259

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title = "Effects of a load resistor on conducting filament characteristics and unipolar resistive switching behaviors in a Pt/NiO/Pt structure",

abstract = "With a simply modified circuit design connecting a Pt/NiO/Pt capacitor to a serial load resistor (R L), resistive switching (RS) characteristics are significantly improved. Distributions of current at low-resistance state and switching voltages during reset and set processes are much reduced, and RS endurance is much enhanced. Using percolation theory, we find that a multiply connected conducting filament (CF) is preferentially formed in a Pt/NiO/Pt capacitor serially connected to an $R L of 1 kΩ. The multiply connected CF may provide uniform heat distribution to a Pt/NiO/Pt capacitor, resulting in reduced randomness during heat-assisted reset process and improved RS characteristics.",

keywords = "Conducting filament (CF), load resistor, nonvolatile memory, resistive random-access memory (ReRAM)",

author = "Inrok Hwang and Lee, {Myung Jae} and Jieun Bae and Sahwan Hong and Kim, {Jin Soo} and Jinsik Choi and Deng, {Xiao Long} and Ahn, {Seung Eon} and Kang, {Sung Oong} and Park, {Bae Ho}",

note = "Funding Information: Manuscript received January 31, 2012; accepted March 1, 2012. Date of publication April 18, 2012; date of current version May 18, 2012. This work was supported in part by the Korean Government MEST under KOSEF NRL Program Grant 2008-0060004, by MEST under KOSEF WCU Program Grant R31-2008-000-10057-0, by Seoul R&BD Program Grant WR090671, and by the Korean MEST Quantum Metamaterials Research Center under KOSEF Grant R11-2008-053-03002-0. The review of this letter was arranged by Editor T. San.",

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doi = "10.1109/LED.2012.2190259",

language = "English",

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journal = "IEEE Electron Device Letters",

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AU - Hwang, Inrok

AU - Lee, Myung Jae

AU - Bae, Jieun

AU - Hong, Sahwan

AU - Kim, Jin Soo

AU - Choi, Jinsik

AU - Deng, Xiao Long

AU - Ahn, Seung Eon

AU - Kang, Sung Oong

AU - Park, Bae Ho

N1 - Funding Information: Manuscript received January 31, 2012; accepted March 1, 2012. Date of publication April 18, 2012; date of current version May 18, 2012. This work was supported in part by the Korean Government MEST under KOSEF NRL Program Grant 2008-0060004, by MEST under KOSEF WCU Program Grant R31-2008-000-10057-0, by Seoul R&BD Program Grant WR090671, and by the Korean MEST Quantum Metamaterials Research Center under KOSEF Grant R11-2008-053-03002-0. The review of this letter was arranged by Editor T. San.

PY - 2012

Y1 - 2012

N2 - With a simply modified circuit design connecting a Pt/NiO/Pt capacitor to a serial load resistor (R L), resistive switching (RS) characteristics are significantly improved. Distributions of current at low-resistance state and switching voltages during reset and set processes are much reduced, and RS endurance is much enhanced. Using percolation theory, we find that a multiply connected conducting filament (CF) is preferentially formed in a Pt/NiO/Pt capacitor serially connected to an $R L of 1 kΩ. The multiply connected CF may provide uniform heat distribution to a Pt/NiO/Pt capacitor, resulting in reduced randomness during heat-assisted reset process and improved RS characteristics.

AB - With a simply modified circuit design connecting a Pt/NiO/Pt capacitor to a serial load resistor (R L), resistive switching (RS) characteristics are significantly improved. Distributions of current at low-resistance state and switching voltages during reset and set processes are much reduced, and RS endurance is much enhanced. Using percolation theory, we find that a multiply connected conducting filament (CF) is preferentially formed in a Pt/NiO/Pt capacitor serially connected to an $R L of 1 kΩ. The multiply connected CF may provide uniform heat distribution to a Pt/NiO/Pt capacitor, resulting in reduced randomness during heat-assisted reset process and improved RS characteristics.

KW - Conducting filament (CF)

KW - load resistor

KW - nonvolatile memory

KW - resistive random-access memory (ReRAM)

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EP - 883

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Effects of a load resistor on conducting filament characteristics and unipolar resistive switching behaviors in a Pt/NiO/Pt structure

Abstract

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Keywords

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