Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Jaewook Jeong; Joonwoo Kim; Donghyun Kim; Heonsu Jeon; Soon Moon Jeong; Yongtaek Hong

doi:10.1063/1.4961379

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

Jaewook Jeong, Joonwoo Kim, Donghyun Kim, Heonsu Jeon, Soon Moon Jeong, Yongtaek Hong

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

Original language	English
Article number	085311
Journal	AIP Advances
Volume	6
Issue number	8
DOIs	https://doi.org/10.1063/1.4961379
State	Published - 1 Aug 2016

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title = "Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor",

abstract = "In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.",

author = "Jaewook Jeong and Joonwoo Kim and Donghyun Kim and Heonsu Jeon and Jeong, \{Soon Moon\} and Yongtaek Hong",

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doi = "10.1063/1.4961379",

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T1 - Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

AU - Jeong, Jaewook

AU - Kim, Joonwoo

AU - Kim, Donghyun

AU - Jeon, Heonsu

AU - Jeong, Soon Moon

AU - Hong, Yongtaek

PY - 2016/8/1

Y1 - 2016/8/1

N2 - In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

AB - In this study, we demonstrate a mobility enhancement structure for fully transparent amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) by embedding a holographically generated periodic nano-conductor in the back-channel regions. The intrinsic field-effect mobility was enhanced up to 2 times compared to that of a reference sample. The enhancement originated from a decrease in the effective channel length due to the highly conductive nano-conductor region. By combining conventional and holographic lithography, the performance of the a-IGZO TFT can be effectively improved without varying the composition of the channel layer.

UR - https://www.scopus.com/pages/publications/84982099153

U2 - 10.1063/1.4961379

DO - 10.1063/1.4961379

M3 - Article

AN - SCOPUS:84982099153

SN - 2158-3226

VL - 6

JO - AIP Advances

JF - AIP Advances

IS - 8

M1 - 085311

ER -

Effective mobility enhancement of amorphous In-Ga-Zn-O thin-film transistors by holographically generated periodic conductor

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