TY - JOUR
T1 - Effective control over near band-edge emission in ZnO/CuO multilayered films
AU - Allabergenov, Bunyod
AU - Shaislamov, Ulugbek
AU - Shim, Hyunseok
AU - Lee, Myeong Jae
AU - Matnazarov, Anvar
AU - Choi, Byeongdae
N1 - Publisher Copyright:
© 2017 Optical Society of America.
PY - 2017
Y1 - 2017
N2 - We report on a study of the microstructural and photoluminescent properties of ZnO/CuO multilayered films. Multilayered ZnO/CuO thin films were deposited on amorphous SiO2/Si substrates by a pulsed laser technique and their microstructural and optical properties were characterized by transmission electron microscopy (TEM) and photoluminescence spectroscopy. TEM and XRD analyses of annealed ZnO/CuO films reveal the formation of multiple crystallographic defects and modification of the dominant growth plane, indicating effective doping of Cu atoms into the ZnO lattice. Consequently, near-band-edge emission in ZnO can be controlled through the number of CuO layers. Redshift of the near-band-edge emission peak from 385 nm up to 422 nm is achieved by increasing the number of CuO layers up to a certain number, above which a downward shift is observed. The results demonstrate that the emission properties of ZnO can be modified and precisely controlled by incorporation of CuO thin layers as a Cu-doping source.
AB - We report on a study of the microstructural and photoluminescent properties of ZnO/CuO multilayered films. Multilayered ZnO/CuO thin films were deposited on amorphous SiO2/Si substrates by a pulsed laser technique and their microstructural and optical properties were characterized by transmission electron microscopy (TEM) and photoluminescence spectroscopy. TEM and XRD analyses of annealed ZnO/CuO films reveal the formation of multiple crystallographic defects and modification of the dominant growth plane, indicating effective doping of Cu atoms into the ZnO lattice. Consequently, near-band-edge emission in ZnO can be controlled through the number of CuO layers. Redshift of the near-band-edge emission peak from 385 nm up to 422 nm is achieved by increasing the number of CuO layers up to a certain number, above which a downward shift is observed. The results demonstrate that the emission properties of ZnO can be modified and precisely controlled by incorporation of CuO thin layers as a Cu-doping source.
UR - https://www.scopus.com/pages/publications/85011923638
U2 - 10.1364/OME.7.000494
DO - 10.1364/OME.7.000494
M3 - Article
AN - SCOPUS:85011923638
SN - 2159-3930
VL - 7
SP - 494
EP - 502
JO - Optical Materials Express
JF - Optical Materials Express
IS - 2
ER -