Effect of the sputtering condition on the LC alignment properties of SiO2 layer

Shi Joon Sung; Kee Jeong Yang; Dae Hwan Kim; Seon Do Yun; Byeong Dae Choi

doi:10.1889/1.3069526

Effect of the sputtering condition on the LC alignment properties of SiO₂ layer

Shi Joon Sung, Kee Jeong Yang, Dae Hwan Kim, Seon Do Yun, Byeong Dae Choi

Daegu Gyeongbuk Institute of Science and Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

The relationship between the sputtering condition and the LC alignment properties of SiO₂ layer was investigated. According to the RF power of sputtering, the Ar pressure showed a different effect on the LC alignment on SiO₂ layers, which might be closely related with the thin layer formation process.

Original language	English
Pages (from-to)	1792-1794
Number of pages	3
Journal	Digest of Technical Papers - SID International Symposium
Volume	39
Issue number	3
DOIs	https://doi.org/10.1889/1.3069526
State	Published - 2008
Event	2008 SID International Symposium - Los Angeles, CA, United States Duration: 20 May 2008 → 21 May 2008

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@article{975c57aae6824f899da69c896fede185,

title = "Effect of the sputtering condition on the LC alignment properties of SiO2 layer",

abstract = "The relationship between the sputtering condition and the LC alignment properties of SiO2 layer was investigated. According to the RF power of sputtering, the Ar pressure showed a different effect on the LC alignment on SiO2 layers, which might be closely related with the thin layer formation process.",

author = "Sung, \{Shi Joon\} and Yang, \{Kee Jeong\} and Kim, \{Dae Hwan\} and Yun, \{Seon Do\} and Choi, \{Byeong Dae\}",

year = "2008",

doi = "10.1889/1.3069526",

language = "English",

volume = "39",

pages = "1792--1794",

journal = "Digest of Technical Papers - SID International Symposium",

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number = "3",

note = "2008 SID International Symposium ; Conference date: 20-05-2008 Through 21-05-2008",

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T1 - Effect of the sputtering condition on the LC alignment properties of SiO2 layer

AU - Sung, Shi Joon

AU - Yang, Kee Jeong

AU - Kim, Dae Hwan

AU - Yun, Seon Do

AU - Choi, Byeong Dae

PY - 2008

Y1 - 2008

N2 - The relationship between the sputtering condition and the LC alignment properties of SiO2 layer was investigated. According to the RF power of sputtering, the Ar pressure showed a different effect on the LC alignment on SiO2 layers, which might be closely related with the thin layer formation process.

AB - The relationship between the sputtering condition and the LC alignment properties of SiO2 layer was investigated. According to the RF power of sputtering, the Ar pressure showed a different effect on the LC alignment on SiO2 layers, which might be closely related with the thin layer formation process.

UR - https://www.scopus.com/pages/publications/54549103213

U2 - 10.1889/1.3069526

DO - 10.1889/1.3069526

M3 - Conference article

AN - SCOPUS:54549103213

SN - 0097-966X

VL - 39

SP - 1792

EP - 1794

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 3

T2 - 2008 SID International Symposium

Y2 - 20 May 2008 through 21 May 2008

ER -

Effect of the sputtering condition on the LC alignment properties of SiO₂ layer

Abstract

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