Effect of pressure on the properties of phosphorus-doped p -type ZnO thin films grown by radio frequency-magnetron sputtering

Dae Kue Hwang; Min Suk Oh; Yong Seok Choi; Seong Ju Park

doi:10.1063/1.2913011

Effect of pressure on the properties of phosphorus-doped p -type ZnO thin films grown by radio frequency-magnetron sputtering

Dae Kue Hwang, Min Suk Oh, Yong Seok Choi, Seong Ju Park

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

We report the effect of pressure on the surface morphology, electrical and optical properties of phosphorus (P)-doped p -type ZnO grown by radio frequency magnetron sputtering. The nanorod structures of P-doped ZnO films became dense and flat with decreasing pressure. The Hall effect measurement of the films grown at a pressure of 5-20 mTorr showed an n -type conductivity after rapid thermal annealing. However, the films grown at a low pressure of 1 mTorr showed a p -type conductivity with a hole concentration of 4.71× 1818 cm3. This result showed that the pressure of rf-magnetron sputtering plays a critical role in the growth of P-doped p -type ZnO.

Original language	English
Article number	161109
Journal	Applied Physics Letters
Volume	92
Issue number	16
DOIs	https://doi.org/10.1063/1.2913011
State	Published - 2008

Bibliographical note

Funding Information:
This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R17-2007-078-01000-0), GTI (GIST Technology Initiative), the IT R&D program of MIC/IITA (2006-S-079-01, Smart window with transparent electronic devices) and the BK 21 program in Korea.

Access to Document

10.1063/1.2913011

Cite this

@article{882f39bfda9e4034b3470986bce21693,

title = "Effect of pressure on the properties of phosphorus-doped p -type ZnO thin films grown by radio frequency-magnetron sputtering",

abstract = "We report the effect of pressure on the surface morphology, electrical and optical properties of phosphorus (P)-doped p -type ZnO grown by radio frequency magnetron sputtering. The nanorod structures of P-doped ZnO films became dense and flat with decreasing pressure. The Hall effect measurement of the films grown at a pressure of 5-20 mTorr showed an n -type conductivity after rapid thermal annealing. However, the films grown at a low pressure of 1 mTorr showed a p -type conductivity with a hole concentration of 4.71× 1818 cm3. This result showed that the pressure of rf-magnetron sputtering plays a critical role in the growth of P-doped p -type ZnO.",

author = "Hwang, {Dae Kue} and Oh, {Min Suk} and Choi, {Yong Seok} and Park, {Seong Ju}",

note = "Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R17-2007-078-01000-0), GTI (GIST Technology Initiative), the IT R&D program of MIC/IITA (2006-S-079-01, Smart window with transparent electronic devices) and the BK 21 program in Korea.",

year = "2008",

doi = "10.1063/1.2913011",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Effect of pressure on the properties of phosphorus-doped p -type ZnO thin films grown by radio frequency-magnetron sputtering

AU - Hwang, Dae Kue

AU - Oh, Min Suk

AU - Choi, Yong Seok

AU - Park, Seong Ju

N1 - Funding Information: This work was supported by the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (No. R17-2007-078-01000-0), GTI (GIST Technology Initiative), the IT R&D program of MIC/IITA (2006-S-079-01, Smart window with transparent electronic devices) and the BK 21 program in Korea.

PY - 2008

Y1 - 2008

N2 - We report the effect of pressure on the surface morphology, electrical and optical properties of phosphorus (P)-doped p -type ZnO grown by radio frequency magnetron sputtering. The nanorod structures of P-doped ZnO films became dense and flat with decreasing pressure. The Hall effect measurement of the films grown at a pressure of 5-20 mTorr showed an n -type conductivity after rapid thermal annealing. However, the films grown at a low pressure of 1 mTorr showed a p -type conductivity with a hole concentration of 4.71× 1818 cm3. This result showed that the pressure of rf-magnetron sputtering plays a critical role in the growth of P-doped p -type ZnO.

AB - We report the effect of pressure on the surface morphology, electrical and optical properties of phosphorus (P)-doped p -type ZnO grown by radio frequency magnetron sputtering. The nanorod structures of P-doped ZnO films became dense and flat with decreasing pressure. The Hall effect measurement of the films grown at a pressure of 5-20 mTorr showed an n -type conductivity after rapid thermal annealing. However, the films grown at a low pressure of 1 mTorr showed a p -type conductivity with a hole concentration of 4.71× 1818 cm3. This result showed that the pressure of rf-magnetron sputtering plays a critical role in the growth of P-doped p -type ZnO.

UR - http://www.scopus.com/inward/record.url?scp=42549106856&partnerID=8YFLogxK

U2 - 10.1063/1.2913011

DO - 10.1063/1.2913011

M3 - Article

AN - SCOPUS:42549106856

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 161109

ER -

Effect of pressure on the properties of phosphorus-doped p -type ZnO thin films grown by radio frequency-magnetron sputtering

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this